S-13A1A12-E8T1U3

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 200mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13A1A12-E8T1U3 transistor has a total of three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High voltage gain
• Low noise figure
• Fast switching speed
• Small package size
• Wide operating temperature range

Advantages and Disadvantages

Advantages: - Excellent signal amplification capabilities - Low noise performance - Suitable for high-frequency applications - Compact size allows for space-saving designs

Disadvantages: - Limited power handling capacity - Relatively low breakdown voltage compared to other transistors

Working Principles

The S-13A1A12-E8T1U3 is an NPN bipolar junction transistor that operates based on the principles of amplification and control of electrical signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This amplification effect allows the transistor to be used in various electronic circuits for signal amplification purposes.

Detailed Application Field Plans

The S-13A1A12-E8T1U3 transistor finds applications in a wide range of electronic devices and systems, including:

1. Audio Amplifiers: The high gain and low noise characteristics make it suitable for audio signal amplification in audio equipment such as amplifiers and receivers.
2. RF Communication Systems: Its fast switching speed and high frequency capabilities make it ideal for use in radio frequency (RF) communication systems, including transmitters and receivers.
3. Oscillators: The transistor's ability to amplify signals at high frequencies makes it suitable for use in oscillator circuits, which generate continuous waveforms for various applications.
4. Sensor Interfaces: It can be used in sensor interface circuits to amplify weak electrical signals from sensors, enabling accurate measurement and detection.

Detailed and Complete Alternative Models

1. S-13A1A12-E8T1U2
2. S-13A1A12-E8T1U4
3. S-13A1A12-E8T1U5
4. S-13A1A12-E8T1U6

These alternative models have similar specifications and pin configurations, providing flexibility in design and compatibility with different circuit requirements.

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