BD239E-S

Product Overview

Category: Semiconductor
Use: Power transistor for high-voltage applications
Characteristics: High voltage, high current capability, low saturation voltage
Package: TO-220AB
Essence: Power amplification and switching
Packaging/Quantity: Typically sold in reels of 1000 units

Specifications

• Voltage Rating: 100V
• Current Rating: 2A
• Power Dissipation: 25W
• Gain (hFE): 25-250
• Frequency: 3MHz
• Operating Temperature: -65°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High voltage capability
• Low collector-emitter saturation voltage
• Fast switching speed
• Good linearity in power amplification applications

Advantages

• Suitable for high-voltage applications
• Low saturation voltage reduces power dissipation
• Wide operating temperature range

Disadvantages

• Limited current rating compared to some alternatives
• Relatively low gain compared to some alternatives

Working Principles

The BD239E-S is a bipolar junction transistor (BJT) designed for power amplification and switching applications. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing the device to amplify or switch electrical signals.

Detailed Application Field Plans

The BD239E-S is commonly used in audio amplifiers, power supplies, motor control circuits, and other high-voltage applications where moderate current and voltage ratings are required. Its low saturation voltage makes it suitable for efficient power switching.

Detailed and Complete Alternative Models

• BD237
• BD238
• BD240
• BD241

Note: The above list is not exhaustive and there are many other alternative models available from various manufacturers.

This information provides a comprehensive overview of the BD239E-S power transistor, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.