CG7831AAT

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Transistor
Packaging/Quantity: Bulk Packaging, 1000 units per pack

Specifications

• Maximum Collector Current: 500mA
• Maximum Collector-Emitter Voltage: 30V
• Maximum Power Dissipation: 625mW
• Transition Frequency: 300MHz
• Collector-Base Voltage: 40V
• Emitter-Base Voltage: 5V
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The CG7831AAT transistor has three pins:

1. Collector (C)
2. Base (B)
3. Emitter (E)

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Suitable for small-signal applications
• Compact TO-92 package for easy integration into circuits

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification - Low noise performance ensures signal clarity - Small package size enables space-saving designs

Disadvantages: - Limited maximum collector current may restrict certain applications - Lower power dissipation compared to some alternative models

Working Principles

The CG7831AAT is a bipolar junction transistor (BJT) that operates based on the principles of amplification and control of electrical current. It consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current at the base terminal, the transistor can control a larger current flowing between the collector and emitter terminals. This amplification capability makes it suitable for various electronic applications.

Detailed Application Field Plans

The CG7831AAT transistor finds applications in various fields, including:

1. Audio Amplification: It can be used to amplify audio signals in audio systems, such as amplifiers and speakers.
2. Radio Frequency (RF) Circuits: The transistor's high gain and low noise characteristics make it suitable for RF signal amplification in communication devices.
3. Sensor Interfaces: It can be utilized in sensor circuits to amplify weak signals from sensors, improving their sensitivity and accuracy.
4. Oscillators: The transistor can be employed in oscillator circuits to generate stable oscillations for frequency generation.

Detailed and Complete Alternative Models

1. CG7832AAT: Similar specifications and characteristics, but with higher maximum collector current (800mA).
2. CG7833AAT: Similar specifications and characteristics, but with lower transition frequency (200MHz).
3. CG7834AAT: Similar specifications and characteristics, but with higher power dissipation (800mW).

(Note: These alternative models are provided for reference and may have slight variations in performance.)

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