CY62256LL-55SNXI

Product Overview

Category

CY62256LL-55SNXI belongs to the category of static random access memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: CY62256LL-55SNXI offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: It is designed to operate efficiently with minimal power requirements.
• Reliable performance: The chip ensures stable and consistent operation, providing reliable data storage and retrieval.
• Compact package: CY62256LL-55SNXI comes in a small form factor, making it suitable for space-constrained designs.
• Large storage capacity: This SRAM chip has a storage capacity of 32 kilobits (32Kb).

Package and Quantity

CY62256LL-55SNXI is available in a surface-mount package. Each package contains one unit of the SRAM chip.

Specifications

• Access Time: 55 nanoseconds (ns)
• Operating Voltage: 5 volts (V)
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2 volts (V)
• Standby Current: 10 microamps (μA)
• Active Current: 30 milliamps (mA)

Pin Configuration

The CY62256LL-55SNXI chip has a total of 28 pins. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Chip Enable (CE): Activating this pin enables the chip for read or write operations.
• Output Enable (OE): When enabled, this pin allows data to be output from the chip.
• Write Enable (WE): Activating this pin enables write operations to the chip.
• Address Inputs (A0-A14): These pins are used to specify the memory location for read or write operations.
• Data Inputs/Outputs (DQ0-DQ7): These pins are used to input or output data to/from the chip.
• Power Supply (VCC): This pin provides the required power to operate the chip.
• Ground (GND): This pin is connected to the ground reference.

Advantages and Disadvantages

Advantages

• High-speed access allows for quick data retrieval.
• Low power consumption ensures energy efficiency.
• Reliable performance guarantees stable operation.
• Compact package size facilitates space-constrained designs.
• Large storage capacity meets various memory requirements.

Disadvantages

• Limited storage capacity compared to other memory technologies like dynamic random access memory (DRAM).
• Relatively higher cost per bit compared to some alternative memory solutions.

Working Principles

CY62256LL-55SNXI operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip uses flip-flops to store each bit of data, allowing for fast access times.

Application Field Plans

CY62256LL-55SNXI finds applications in various electronic devices and systems, including but not limited to: - Microcontrollers - Embedded systems - Communication equipment - Industrial automation systems - Medical devices - Automotive electronics

Alternative Models

Some alternative models to CY62256LL-55SNXI include: - CY62256NLL-55SNXI - CY62256VLL-55SNXI - CY62256ZLL-55SNXI

These models offer similar specifications and functionality, providing alternative options for designers and engineers.

In conclusion, CY62256LL-55SNXI is a high-speed, low-power SRAM chip with a compact package and reliable performance. It finds applications in various electronic systems and offers advantages such as fast access times and energy efficiency. However, it has limitations in terms of storage capacity and cost compared to alternative memory technologies.