IS29GL128S-10DHV020

Product Overview

Category

IS29GL128S-10DHV020 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL128S-10DHV020 offers a storage capacity of 128 gigabits (16 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed rating of 10 nanoseconds, this flash memory device ensures quick and efficient data access.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
• Low power consumption: The IS29GL128S-10DHV020 is energy-efficient, consuming minimal power during operation.
• Compact package: This flash memory device comes in a small form factor, making it suitable for integration into compact electronic devices.
• RoHS compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package and Quantity

The IS29GL128S-10DHV020 is typically packaged in a surface-mount package (SOP) or ball grid array (BGA) package. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Memory Type: Flash
• Capacity: 128 gigabits (16 gigabytes)
• Access Time: 10 nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOP/BGA

Pin Configuration

The IS29GL128S-10DHV020 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RESET#
48. GND

Functional Features

• Erase and Program Operations: The IS29GL128S-10DHV020 supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: This flash memory device offers the option to lock specific blocks of memory, preventing accidental modification or erasure.
• Read and Write Protection: The product provides read and write protection features to safeguard sensitive data from unauthorized access.
• Error Correction Code (ECC): ECC functionality is integrated into the device to ensure data integrity and minimize errors during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity enables the storage of large amounts of data.
• Fast access time ensures quick data retrieval and processing.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Limited compatibility: The IS29GL128S-10DHV020 may not be compatible with all devices due to differences in interface and voltage requirements.
• Cost: Flash memory devices with high capacities can be relatively expensive compared to lower-capacity alternatives.

Working Principles

The IS29GL128S-10DHV020 utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value. The device uses a parallel interface to communicate with the host system, allowing for efficient data transfer.

Application Field Plans

The IS29GL128S-10DHV020 finds applications in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and