IS29GL256S-10TFV013

Product Overview

Category

IS29GL256S-10TFV013 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• High storage capacity: The IS29GL256S-10TFV013 offers a storage capacity of 256 gigabits (32 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed of 10 nanoseconds, this flash memory device ensures quick and efficient data transfer.
• Reliable performance: The IS29GL256S-10TFV013 is known for its high reliability and durability, making it suitable for long-term use.
• Low power consumption: This flash memory device is designed to consume minimal power, resulting in extended battery life for portable devices.
• Compact package: The IS29GL256S-10TFV013 comes in a small form factor package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The IS29GL256S-10TFV013 is typically packaged in a surface mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Model: IS29GL256S-10TFV013
• Storage Capacity: 256 gigabits (32 gigabytes)
• Access Time: 10 nanoseconds
• Supply Voltage: 3.3 volts
• Package Type: Surface Mount Technology (SMT)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS29GL256S-10TFV013 has a pin configuration as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable control
5. CE# - Chip enable control
6. OE# - Output enable control
7. RY/BY# - Ready/busy status output
8. RP# - Reset/Power-down control
9. WP#/ACC - Write protect or accelerated programming control
10. VSS - Ground

Functional Features

• High-speed data transfer: The IS29GL256S-10TFV013 offers fast read and write operations, allowing for efficient data access.
• Error correction: This flash memory device incorporates error correction techniques to ensure data integrity and reliability.
• Block erase and program: The IS29GL256S-10TFV013 supports block erase and program operations, enabling selective modification of data.
• Power-saving modes: It features power-saving modes such as standby and sleep modes, reducing power consumption when not in use.
• Wear-leveling algorithm: The IS29GL256S-10TFV013 utilizes a wear-leveling algorithm to evenly distribute data writes across the memory cells, prolonging its lifespan.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Relatively high cost compared to lower-capacity flash memory devices
• Limited endurance due to finite write cycles

Working Principles

The IS29GL256S-10TFV013 is based on NAND flash memory technology. It stores data by trapping electrons in floating gate transistors. When reading data, the charge level in each memory cell is measured to determine the stored information. During writing, the trapped charge is adjusted to represent the desired data.

Detailed Application Field Plans

The IS29GL256S-10TFV013 is widely used in various electronic devices, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the IS29GL256S-10TFV013 include: - Samsung K9F2G08U0C - Micron MT29F2G08ABAEAWP - Toshiba TC58NVG2S0FTA00

These models offer similar storage capacities and functionalities, providing alternatives for different application requirements.

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