IS29GL512S-11TFV010

Product Overview

Category

IS29GL512S-11TFV010 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size
• Durable and reliable

Package

IS29GL512S-11TFV010 is available in a small form factor package, which makes it suitable for integration into compact electronic devices.

Essence

The essence of IS29GL512S-11TFV010 lies in its ability to store and retrieve digital data quickly and efficiently, providing a reliable solution for data storage needs.

Packaging/Quantity

This product is typically packaged individually and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Model: IS29GL512S-11TFV010
• Memory Type: Flash memory
• Capacity: 512 megabits (64 megabytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 110 ns
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IS29GL512S-11TFV010 flash memory device has the following pin configuration:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable control signal
5. CE# - Chip enable control signal
6. OE# - Output enable control signal
7. RP# - Ready/Busy status output
8. BYTE# - Byte enable control signal
9. RESET# - Reset control signal

Functional Features

• High-speed data transfer
• Erase and program operations
• Sector protection mechanism
• Automatic sleep mode for power saving
• Error correction code (ECC) support
• Data retention for extended periods

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size for easy integration
• Reliable and durable

Disadvantages

• Limited lifespan due to finite erase/write cycles
• Relatively higher cost compared to other storage options

Working Principles

IS29GL512S-11TFV010 utilizes the principles of flash memory technology, which involves storing data in a non-volatile manner using floating-gate transistors. The device uses electrical charges to represent binary data, with the ability to erase and rewrite data as needed.

Detailed Application Field Plans

IS29GL512S-11TFV010 finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. IS29GL256S-11TFV010: 256 megabit flash memory device with similar specifications.
2. IS29GL1G08A-11TFV010: 1 gigabit flash memory device with higher storage capacity.
3. IS29GL064A-11TFV010: 64 megabit flash memory device with lower storage capacity.

These alternative models offer different storage capacities to cater to diverse application requirements.

In conclusion, the IS29GL512S-11TFV010 flash memory device is a reliable and efficient solution for data storage needs in various electronic devices. With its high capacity, fast speeds, and compact size, it offers advantages in terms of performance and integration. However, it is important to consider the limited lifespan and relatively higher cost compared to other storage options.