QMP29GL512R10TFIR10H

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Compact package size
• Package: TFIR10H (Thin Small Outline Package)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Individually packaged, quantity varies based on manufacturer's specifications

Specifications

• Model: QMP29GL512R10TFIR10H
• Capacity: 512 GB
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

The QMP29GL512R10TFIR10H flash memory module has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply | | 2 | A0-A18 | Address Inputs | | 3 | DQ0-DQ15 | Data Inputs/Outputs | | 4 | WE# | Write Enable | | 5 | CE# | Chip Enable | | 6 | OE# | Output Enable | | 7 | RE# | Read Enable | | 8 | WP# | Write Protect | | 9 | RY/BY# | Ready/Busy Status | | 10 | RESET# | Reset |

Functional Features

• High-speed data transfer
• Reliable data retention
• Low power consumption
• Error correction capabilities
• Block erase and sector erase options
• Hardware and software write protection

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write operations
• Compact package size
• High endurance
• Wide operating temperature range

Disadvantages

• Higher cost compared to other memory options
• Limited write endurance compared to some newer technologies

Working Principles

The QMP29GL512R10TFIR10H flash memory utilizes a combination of floating-gate transistors and NAND technology. Data is stored in the form of electrical charges trapped within the floating gates. When reading data, the charge levels are detected and converted into digital signals. During writing, the charges are either added or removed from the floating gates based on the desired data.

Detailed Application Field Plans

The QMP29GL512R10TFIR10H flash memory module finds applications in various electronic devices, including: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Embedded systems - Automotive electronics

Detailed and Complete Alternative Models

• QMP29GL256R10TFIR10H: 256 GB capacity, same specifications as QMP29GL512R10TFIR10H
• QMP29GL1T10TFIR10H: 1 TB capacity, same specifications as QMP29GL512R10TFIR10H
• QMP29GL512R12TFIR10H: 512 GB capacity, higher access time of 12 ns

Note: The above alternative models are provided for reference and may vary based on manufacturer availability.

This entry provides an overview of the QMP29GL512R10TFIR10H flash memory module, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.