S29GL01GT11FHIV13

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory for reliable data storage
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Model: S29GL01GT11FHIV13
• Capacity: 1 Gigabit (128 Megabytes)
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 110 ns
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL01GT11FHIV13 flash memory IC has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status
9. WP#/ACC: Write protect or accelerated programming control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Reliable and durable non-volatile memory
• Low power consumption
• Built-in error correction codes (ECC) for data integrity
• Sector erase and block erase capabilities
• Hardware and software protection features
• Advanced security features for data protection

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Long data retention period - Low power consumption - Reliable and durable

Disadvantages: - Higher cost compared to other memory technologies - Limited write endurance compared to some alternatives

Working Principles

The S29GL01GT11FHIV13 flash memory utilizes a floating gate transistor technology. It stores data by trapping electrons in the floating gate, which alters the threshold voltage of the transistor. This allows the memory cell to retain its state even when power is removed. The data can be read by applying appropriate voltages to the memory cells and sensing the resulting current flow.

Detailed Application Field Plans

The S29GL01GT11FHIV13 flash memory is widely used in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems
7. Medical devices

Its high capacity, fast access times, and reliability make it suitable for applications that require large amounts of non-volatile storage.

Detailed and Complete Alternative Models

1. S29GL512T11TFI010: 512 Megabit (64 Megabytes) capacity, parallel interface
2. S29GL02GT11TFI020: 2 Gigabit (256 Megabytes) capacity, parallel interface
3. S29GL04GT11TFI040: 4 Gigabit (512 Megabytes) capacity, parallel interface
4. S29GL08GT11TFI080: 8 Gigabit (1 Gigabyte) capacity, parallel interface

These alternative models offer different capacities to suit varying storage requirements while maintaining similar characteristics and functionality.

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