S29GL01GT11FHIV40

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast read and write speeds
  • Non-volatile memory
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a solid-state format
• Packaging/Quantity: Typically sold in reels or trays containing multiple ICs

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Capacity: 1 Gigabit (128 Megabytes)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Page Size: 256 bytes
• Erase Time: 2 ms (typical)

Detailed Pin Configuration

The S29GL01GT11FHIV40 has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/BYTE# (Reset/Byte#)
8. RY/BY# (Ready/Busy#)
9. WP#/ACC (Write Protect/Acceleration)
10. VSS (Ground)

Functional Features

• High-Speed Operation: The S29GL01GT11FHIV40 offers fast read and write speeds, allowing for efficient data transfer.
• Reliability: With its non-volatile memory technology, the data stored in the flash memory remains intact even when power is disconnected.
• High Capacity: The 1 Gigabit capacity provides ample storage space for various applications.
• Compatibility: The parallel interface makes it compatible with a wide range of electronic devices.

Advantages and Disadvantages

Advantages: - Fast read and write speeds - Non-volatile memory ensures data retention - High capacity for storing large amounts of data - Compatibility with different devices

Disadvantages: - Higher power consumption compared to some other memory technologies - Limited endurance (number of erase/write cycles) compared to other types of memory

Working Principles

The S29GL01GT11FHIV40 utilizes NOR Flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. These trapped charges represent binary values (0 or 1). When reading data, the charge level is measured to determine the stored value. During programming or erasing, high voltages are applied to modify the charge level in the floating gate.

Detailed Application Field Plans

The S29GL01GT11FHIV40 is widely used in various electronic devices that require non-volatile storage, such as:

1. Embedded Systems: Used for firmware storage in microcontrollers and system-on-chip (SoC) devices.
2. Consumer Electronics: Found in digital cameras, set-top boxes, and portable media players for data storage.
3. Automotive Applications: Utilized in automotive infotainment systems, instrument clusters, and navigation systems.
4. Industrial Equipment: Used in industrial control systems, robotics, and automation devices for program storage.

Detailed and Complete Alternative Models

1. S29GL512T11TFI010: 512 Megabit (64 Megabytes) capacity, same specifications as S29GL01GT11FHIV40.
2. S29GL02GT11TFI020: 2 Gigabit (256 Megabytes) capacity, same specifications as S29GL01GT11FHIV40.
3. S29GL04GT11TFI040: 4 Gigabit (512 Megabytes) capacity, same specifications as S29GL01GT11FHIV40.

These alternative models offer different memory capacities while maintaining the same specifications and functionality as the S29GL01GT11FHIV40.

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