S29GL128N11FFVR10

Product Overview

Category

S29GL128N11FFVR10 belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: The data stored in S29GL128N11FFVR10 remains intact even when power is turned off.
• High capacity: It offers a storage capacity of 128 gigabits (16 gigabytes).
• Fast access times: S29GL128N11FFVR10 provides quick read and write operations, enabling efficient data transfer.
• Reliable: It has a high endurance level and can withstand numerous read and write cycles.
• Compact package: The device is packaged in a small form factor, making it suitable for space-constrained applications.
• Low power consumption: S29GL128N11FFVR10 is designed to consume minimal power, enhancing battery life in portable devices.

Packaging/Quantity

The S29GL128N11FFVR10 flash memory device is typically packaged in a surface-mount package (SMD) format. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel or Serial
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of S29GL128N11FFVR10 may vary depending on the specific package and interface type. However, a typical pin configuration includes the following pins:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A23: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. RY/BY#: Ready/busy status output

Please refer to the device datasheet for the complete and accurate pin configuration details.

Functional Features

• High-speed data transfer: S29GL128N11FFVR10 offers fast read and write speeds, enabling efficient data access.
• Block erase capability: It supports block-level erasure, allowing for efficient management of stored data.
• Error correction: The device incorporates error correction techniques to ensure data integrity and reliability.
• Security features: S29GL128N11FFVR10 may include security measures like password protection or encryption to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access times
• Compact form factor
• Low power consumption
• High endurance level

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited write endurance compared to some other non-volatile memory types

Working Principles

S29GL128N11FFVR10 utilizes a technology called NAND flash memory. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. During writing, the charge is adjusted to represent the desired data.

Detailed Application Field Plans

S29GL128N11FFVR10 finds applications in various electronic devices that require non-volatile storage, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to S29GL128N11FFVR10 include: - S34ML01G200TFI000: A 1-gigabit NAND flash memory device with similar characteristics. - MT29F2G08ABAEAWP-IT:E: A 2-gigabit NAND flash memory device from a different manufacturer.

These alternative models offer different storage capacities, package types, or interface options, providing flexibility for various application requirements.

Note: The content provided above is an example and may not reflect the actual specifications of S29GL128N11FFVR10. Please refer to the official datasheet or manufacturer's documentation for accurate information.