S29GL128N11TAI010

Product Overview

Category

S29GL128N11TAI010 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: The data stored in S29GL128N11TAI010 is retained even when power is turned off.
• High capacity: It has a storage capacity of 128 gigabits (16 gigabytes).
• High-speed data transfer: S29GL128N11TAI010 offers fast read and write speeds, enabling quick access to stored data.
• Reliable: It provides reliable data storage with built-in error correction mechanisms.
• Low power consumption: S29GL128N11TAI010 is designed to consume minimal power during operation.

Package

S29GL128N11TAI010 is available in a compact package that ensures easy integration into electronic devices. The specific package type may vary depending on the manufacturer.

Essence

The essence of S29GL128N11TAI010 lies in its ability to provide high-capacity, non-volatile storage with fast data transfer speeds and low power consumption.

Packaging/Quantity

The packaging of S29GL128N11TAI010 typically includes a single unit of the flash memory device. The quantity may vary based on the manufacturer's specifications.

Specifications

• Storage Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel or Serial
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Speed: Up to 100 megabytes per second (varies based on interface)

Detailed Pin Configuration

The pin configuration of S29GL128N11TAI010 may vary depending on the specific package and manufacturer. However, a typical pin configuration includes:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A23: Address lines for memory access
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control signal
6. CE#: Chip enable control signal
7. OE#: Output enable control signal
8. RP#/BYTE#: Reset/byte control signal
9. RY/BY#: Ready/busy status output

Functional Features

• Erase and Program Operations: S29GL128N11TAI010 supports both sector erase and byte program operations, allowing flexible data manipulation.
• Error Correction: Built-in error correction mechanisms ensure reliable data storage and retrieval.
• Block Locking: Certain sectors of the flash memory can be locked to prevent accidental modification or erasure.
• Read and Write Protection: S29GL128N11TAI010 offers various protection features to safeguard stored data from unauthorized access.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer speeds
• Low power consumption
• Reliable data storage
• Flexible erase and program operations

Disadvantages

• Costly compared to lower-capacity flash memory devices
• Limited endurance (number of erase/write cycles)

Working Principles

S29GL128N11TAI010 utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information using charge levels. The data is accessed by sending appropriate signals to the memory's control pins, enabling read, write, or erase operations.

Detailed Application Field Plans

S29GL128N11TAI010 finds applications in various electronic devices that require high-capacity, non-volatile storage. Some of the common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

• S29GL064N11TFI010: 64 gigabit (8 gigabyte) flash memory device with similar characteristics and features.
• S29GL256N11FFI020: 256 gigabit (32 gigabyte) flash memory device with higher storage capacity.

These alternative models provide different storage capacities to cater to specific requirements while maintaining similar functionality and characteristics as S29GL128N11TAI010.

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