S29GL256N10FAI020

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple ICs

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Access Time: 90 nanoseconds (typical)
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 16-bit word width
• Erase Sectors: 128 uniform sectors, 4KB each
• Programming: Byte or word programming
• Endurance: 100,000 program/erase cycles (minimum)

Detailed Pin Configuration

The S29GL256N10FAI020 has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. WE#
35. CE#
36. RE#
37. BYTE#
38. ALE#
39. WP#
40. RY/BY#
41. VSSQ
42. VCC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VSS

Functional Features

• High-speed read and write operations enable fast data access.
• Non-volatile memory retains stored data even when power is removed.
• Large storage capacity allows for the storage of significant amounts of data.
• Uniform sector erase enables efficient management of stored information.
• Byte or word programming provides flexibility in writing data.

Advantages

• Fast access times enhance overall system performance.
• Non-volatile nature ensures data integrity during power cycles.
• Large storage capacity accommodates diverse application requirements.
• Uniform sector erase simplifies data management tasks.
• Flexible programming options allow for versatile data manipulation.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited endurance may require careful usage in high-write applications.
• Parallel interface may limit compatibility with newer systems.
• Relatively larger physical size compared to alternative memory solutions.

Working Principles

The S29GL256N10FAI020 utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. The presence or absence of trapped electrons determines the binary state (0 or 1) of each memory cell. When reading data, the memory controller applies appropriate voltages to the memory cells and measures the resulting electrical current to determine the stored value. During programming or erasing, specific voltage levels are applied to modify the electron trapping state within the memory cells.

Detailed Application Field Plans

The S29GL256N10FAI020 is commonly used in various electronic devices, including: - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems - Networking equipment

Detailed and Complete Alternative Models

1. S29GL128N10TFI010 - 128 Megabit NOR Flash Memory, 90ns access time, parallel interface.
2. S29GL512N11FFI020 - 512 Megabit NOR Flash Memory, 110ns access time, parallel interface.
3. S29GL064N90TFI040 - 64 Megabit NOR Flash Memory, 90ns access time, parallel interface.
4. S29GL256P11TFI010 - 256 Megabit NOR Flash Memory, 110ns access time, parallel interface.
5. S29GL032N90TFI030 - 32 Megabit NOR Flash Memory, 90ns access time, parallel interface.

These alternative models offer different capacities, access times, and package options to suit various application requirements.

*Note