S29GL256N11FFIS30

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read and write speeds
  • Reliable and durable
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and portable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32 Megabit x 8-bit
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time:
  • Random Read: 70 ns
  • Page Program: 2 ms
  • Block Erase: 2 ms
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL256N11FFIS30 has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect input/acceleration input
10. VSS: Ground

Functional Features

• High-speed data transfer
• Easy integration with various electronic devices
• Efficient power management
• Error correction capabilities
• Sector-based erase and programming
• Hardware and software protection mechanisms

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact form factor
• High reliability and durability
• Wide operating temperature range

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to some alternative models
• Requires additional circuitry for interfacing with microcontrollers

Working Principles

The S29GL256N11FFIS30 utilizes a floating-gate transistor technology called NOR flash memory. It stores digital information by trapping electric charges in the floating gate, which alters the transistor's conductive properties. This allows data to be retained even when the power is turned off. The memory cells are organized into blocks, which can be individually erased or programmed.

Detailed Application Field Plans

The S29GL256N11FFIS30 is widely used in various electronic devices, including:

1. Mobile phones
2. Tablets
3. Digital cameras
4. Solid-state drives (SSDs)
5. Gaming consoles
6. Automotive electronics
7. Industrial control systems

Its high capacity, fast access times, and reliability make it suitable for applications that require large amounts of non-volatile storage.

Detailed and Complete Alternative Models

1. S29GL128N10TFI010: 128 Megabit parallel flash memory with similar specifications.
2. MT29F256G08CJAAA: 256 Gigabit NAND flash memory with different interface and characteristics.
3. AT25SF041-SSHD-T: 4 Megabit serial flash memory with lower capacity and slower speeds.

These alternative models offer different features and may be more suitable depending on specific requirements.

In conclusion, the S29GL256N11FFIS30 is a high-capacity flash memory device that provides reliable and fast data storage capabilities. Its wide range of applications and compatibility with various electronic devices make it a popular choice in the industry.

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