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S29WS128N0SBFW012

S29WS128N0SBFW012

Basic Information Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: Non-volatile, high-speed read/write operations, low power consumption
  • Package: Surface Mount Technology (SMT)
  • Essence: Stores digital information in a solid-state format
  • Packaging/Quantity: Available in reels or trays, quantity varies based on customer requirements

Specifications

  • Capacity: 128 Megabits (16 Megabytes)
  • Organization: 16 M x 8 bits
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 70 ns (max)
  • Erase/Program Time: 2 ms (typical)

Detailed Pin Configuration

The S29WS128N0SBFW012 has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. CE#
  19. WE#
  20. OE#
  21. BYTE#
  22. NC
  23. DQ0
  24. DQ1
  25. DQ2
  26. DQ3
  27. DQ4
  28. DQ5
  29. DQ6
  30. DQ7
  31. RY/BY#
  32. RESET#
  33. WP#
  34. RP#
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. VSS
  41. VSS
  42. VSS
  43. VSS
  44. VSS
  45. VSS
  46. VSS
  47. VSS
  48. VSS

Functional Features

  • High-speed read and write operations for efficient data transfer
  • Non-volatile memory retains data even when power is disconnected
  • Low power consumption extends battery life in portable devices
  • Reliable and durable, with a high number of erase/program cycles
  • Built-in error correction codes ensure data integrity

Advantages and Disadvantages

Advantages

  • Fast access times enable quick data retrieval
  • Wide voltage range allows compatibility with various systems
  • Compact package size saves board space
  • High endurance ensures long-term reliability
  • Suitable for a wide range of applications

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Higher cost per unit compared to traditional hard drives
  • Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

The S29WS128N0SBFW012 utilizes NAND flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. When a specific voltage is applied, the trapped charge can be read or modified. This non-volatile memory retains data even when power is removed.

Detailed Application Field Plans

The S29WS128N0SBFW012 is widely used in various electronic devices, including: 1. Smartphones and tablets for storing operating systems and user data 2. Digital cameras for storing photos and videos 3. Automotive systems for firmware storage and data logging 4. Industrial equipment for program storage and data buffering 5. Consumer electronics such as gaming consoles and media players

Detailed and Complete Alternative Models

  1. S29WS256N0SBFW012 - 256 Megabit (32 Megabyte) capacity
  2. S29WS512N0SBFW012 - 512 Megabit (64 Megabyte) capacity
  3. S29WS01GN0SBFW012 - 1 Gigabit (128 Megabyte) capacity
  4. S29WS02GN0SBFW012 - 2 Gigabit (256 Megabyte) capacity

These alternative models offer increased storage capacities while maintaining similar specifications and pin configurations.

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技術ソリューションにおける S29WS128N0SBFW012 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of S29WS128N0SBFW012 in technical solutions:

  1. Q: What is the S29WS128N0SBFW012? A: The S29WS128N0SBFW012 is a specific model of flash memory chip manufactured by a company called Cypress Semiconductor.

  2. Q: What is the capacity of the S29WS128N0SBFW012? A: The S29WS128N0SBFW012 has a capacity of 128 megabits (16 megabytes).

  3. Q: What is the interface used for connecting the S29WS128N0SBFW012 to a microcontroller or processor? A: The S29WS128N0SBFW012 uses a standard parallel interface for communication with the host device.

  4. Q: What voltage levels does the S29WS128N0SBFW012 support? A: The S29WS128N0SBFW012 supports a voltage range of 2.7V to 3.6V.

  5. Q: Can the S29WS128N0SBFW012 be used as a boot device in embedded systems? A: Yes, the S29WS128N0SBFW012 can be used as a boot device in many embedded systems due to its fast access times and reliability.

  6. Q: Does the S29WS128N0SBFW012 support hardware or software write protection? A: Yes, the S29WS128N0SBFW012 supports both hardware and software write protection mechanisms to prevent accidental data modification.

  7. Q: What is the typical erase time for the S29WS128N0SBFW012? A: The typical erase time for the S29WS128N0SBFW012 is around 10 milliseconds.

  8. Q: Can the S29WS128N0SBFW012 withstand high temperatures? A: Yes, the S29WS128N0SBFW012 is designed to operate reliably in a wide temperature range, typically from -40°C to +85°C.

  9. Q: Is the S29WS128N0SBFW012 compatible with industry-standard flash memory protocols? A: Yes, the S29WS128N0SBFW012 is compatible with common flash memory protocols such as CFI (Common Flash Interface) and JEDEC.

  10. Q: What are some typical applications for the S29WS128N0SBFW012? A: The S29WS128N0SBFW012 is commonly used in various applications including automotive systems, industrial control, consumer electronics, and telecommunications equipment.

Please note that the answers provided here are general and may vary depending on specific implementation details and requirements.