S34MS02G200GHI000

Product Overview

Category

S34MS02G200GHI000 belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: S34MS02G200GHI000 has a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It offers high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The product ensures reliable performance with its advanced error correction techniques.
• Low power consumption: S34MS02G200GHI000 is designed to consume minimal power, making it suitable for battery-powered devices.
• Long lifespan: It has a long lifespan due to its robust design and wear-leveling algorithms.

Package

The S34MS02G200GHI000 NAND flash memory comes in a compact surface-mount package.

Essence

The essence of S34MS02G200GHI000 lies in its ability to provide high-capacity, reliable, and fast data storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each containing a specific quantity of NAND flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The S34MS02G200GHI000 NAND flash memory has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. WE: Write Enable
5. RE: Read Enable
6. CLE: Command Latch Enable
7. A0-A18: Address Inputs
8. DQ0-DQ15: Data Input/Output

Functional Features

• Block Erase/Program: Allows for erasing and programming data in blocks, enhancing efficiency.
• Page Read/Program: Enables reading and programming of data at the page level, providing flexibility.
• Random Access: Supports random access to specific memory locations, facilitating quick data retrieval.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-Leveling: Utilizes wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Long lifespan

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance due to erase/program cycles

Working Principles

S34MS02G200GHI000 operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells that store data as electrical charges. These charges are trapped within floating gate transistors, representing binary values. The data can be read, programmed, or erased by applying appropriate voltage levels to the memory cells.

Detailed Application Field Plans

The S34MS02G200GHI000 NAND flash memory finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. S34MS01G200GHI000: 1 GB NAND flash memory with similar specifications.
2. S34MS04G200GHI000: 4 GB NAND flash memory with similar specifications.
3. S34MS08G200GHI000: 8 GB NAND flash memory with similar specifications.

These alternative models offer different storage capacities while maintaining similar characteristics and functionality to the S34MS02G200GHI000.

Note: The above information is subject to change based on the manufacturer's updates and revisions.

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