V29GL256P11TAI020

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • Non-volatile
  • Flash memory technology
  • High storage capacity
  • Low power consumption
• Package: TAI020 package
• Essence: Data storage and retrieval
• Packaging/Quantity: Individual units or reels

Specifications

• Memory Type: Flash
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Suspend & Resume Support: Yes
• Write/Erase Endurance: 100,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The V29GL256P11TAI020 has a total of 48 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. A19 - Address Input
21. A20 - Address Input
22. A21 - Address Input
23. A22 - Address Input
24. A23 - Address Input
25. A24 - Address Input
26. A25 - Address Input
27. A26 - Address Input
28. A27 - Address Input
29. A28 - Address Input
30. A29 - Address Input
31. A30 - Address Input
32. A31 - Address Input
33. DQ0 - Data Input/Output
34. DQ1 - Data Input/Output
35. DQ2 - Data Input/Output
36. DQ3 - Data Input/Output
37. DQ4 - Data Input/Output
38. DQ5 - Data Input/Output
39. DQ6 - Data Input/Output
40. DQ7 - Data Input/Output
41. WE# - Write Enable
42. CE# - Chip Enable
43. OE# - Output Enable
44. RESET# - Reset
45. VCC - Power Supply
46. GND - Ground
47. NC - No Connection
48. NC - No Connection

Functional Features

• Non-volatile memory: Retains data even when power is removed
• Flash memory technology: Allows for fast read and write operations
• High storage capacity: 256 Megabits (32 Megabytes) of data can be stored
• Low power consumption: Operates within a low voltage range, reducing energy usage
• Erase/Program Suspend & Resume Support: Provides flexibility in programming operations
• Reliable data retention: Can retain data for up to 20 years

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write operations - Low power consumption - Long data retention period

Disadvantages: - Limited endurance (100,000 cycles) - Requires external circuitry for interfacing

Working Principles

The V29GL256P11TAI020 is based on flash memory technology. It utilizes a grid of memory cells that can be electrically programmed and erased. The memory cells store data as charges in floating gate transistors. When reading data, the charges are detected to determine the stored information. Writing and erasing operations involve applying specific voltage levels to modify the charge state of the memory cells.

Detailed Application Field Plans

The V29GL256P11TAI020 is commonly used in various electronic devices and systems that require non-volatile storage. Some application fields include: - Consumer electronics: Digital cameras, MP3 players, gaming consoles - Automotive: Infotainment systems, navigation systems - Industrial: Data loggers, control systems - Communication: Routers, switches, network equipment

Detailed and Complete Alternative Models

• V29GL128P11TFI010
• V29GL512P11TAI020
• V29GL256P11TFC010
• V29GL064P11