The DMG4N60SK3-13 belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This semiconductor device exhibits characteristics such as high voltage capability, low on-state resistance, and fast switching speed. It is typically packaged in a TO-252-3 package and is available in quantities suitable for both prototyping and production applications.
The DMG4N60SK3-13 features a standard three-pin configuration: 1. Gate (G): Input pin for controlling the switching operation. 2. Drain (D): Output pin connected to the load or circuitry. 3. Source (S): Ground reference for the MOSFET.
Advantages - Efficient Power Handling - Fast Switching Performance - Suitable for High Voltage Applications
Disadvantages - Sensitivity to Overvoltage Conditions - Gate Drive Requirements
The DMG4N60SK3-13 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the MOSFET transitions into a low-resistance state, allowing current to flow through the drain-source path.
The DMG4N60SK3-13 finds extensive application in various fields, including: - Switching Power Supplies - Motor Control Circuits - Inverter Systems - Audio Amplifiers
In conclusion, the DMG4N60SK3-13 power MOSFET offers a balance of high voltage capability, low on-state resistance, and fast switching speed, making it suitable for diverse electronic applications.
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What type of package does DMG4N60SK3-13 come in?
What is the on-state resistance of DMG4N60SK3-13?
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Can DMG4N60SK3-13 be used in power supply designs?
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Is DMG4N60SK3-13 RoHS compliant?