DMN3730UFB4-7

Product Overview

Category

The DMN3730UFB4-7 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The DMN3730UFB4-7 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 25A
• RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
• Gate-Source Voltage (VGS) ±20V

Detailed Pin Configuration

The DMN3730UFB4-7 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• High-speed switching for efficient operation
• Wide voltage tolerance for versatile applications

Advantages

• Enhanced power efficiency
• Reduced heat generation
• Suitable for high-frequency applications

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The DMN3730UFB4-7 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

• IRF3709ZPBF
• FDP8878

In conclusion, the DMN3730UFB4-7 power MOSFET offers high performance and reliability in various electronic applications, making it an essential component for efficient power management and control.

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