MMBF170Q-7-F

Introduction

The MMBF170Q-7-F is a field-effect transistor (FET) that belongs to the category of electronic components. This device is commonly used in various electronic circuits and applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Electronic component
• Use: Amplification, switching, and signal processing in electronic circuits
• Characteristics: Low power consumption, high input impedance, small package size
• Package: SOT-323
• Essence: Field-effect transistor for low-power applications
• Packaging/Quantity: Available in tape and reel packaging, quantity varies by manufacturer

Specifications

• Drain-Source Voltage (VDS): 25V
• Gate-Source Voltage (VGS): ±8V
• Drain Current (ID): 0.5A
• Power Dissipation (PD): 225mW
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Gate (G)
2. Source (S)
3. Drain (D)

Functional Features

• High input impedance
• Low power consumption
• Fast switching speed
• Small package size

Advantages and Disadvantages

Advantages

• Suitable for low-power applications
• Compact design
• Compatible with surface mount technology (SMT)

Disadvantages

• Limited maximum voltage and current ratings
• Sensitive to electrostatic discharge (ESD)

Working Principles

The MMBF170Q-7-F operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the source and drain terminals. By modulating the electric field in the channel, it can amplify or switch electronic signals effectively.

Detailed Application Field Plans

The MMBF170Q-7-F is widely used in the following applications: - Low-power amplifiers - Signal switching circuits - Sensor interfaces - Battery-powered devices

Detailed and Complete Alternative Models

• MMBF170LT1G: Similar specifications and package size
• MMBF170L: Higher power dissipation rating
• MMBF170: Through-hole package variant

In conclusion, the MMBF170Q-7-F is a versatile field-effect transistor suitable for various low-power electronic applications, offering a balance of performance and compactness.

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