Encyclopedia Entry: 71V016SA12BFG8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V016SA12BFG8 is a high-speed, low-power CMOS static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Non-volatile memory - Easy integration with other components

Package: The 71V016SA12BFG8 is available in a compact and durable surface-mount package, which ensures easy installation and protection against external factors such as moisture and dust.

Essence: This IC serves as a crucial component in electronic devices by providing fast and reliable data storage capabilities. It enhances the overall performance and efficiency of the devices it is integrated into.

Packaging/Quantity: The 71V016SA12BFG8 is typically packaged in reels or trays, containing a specific quantity of ICs per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Pin Count: 48

Detailed Pin Configuration

The 71V016SA12BFG8 IC has a total of 48 pins, each serving a specific function. The pin configuration is as follows:

(Pin Number - Pin Name - Function) 1 - VCC - Power Supply 2 - A0-A19 - Address Inputs 3 - CE1, CE2 - Chip Enable Inputs 4 - OE - Output Enable Input 5 - WE - Write Enable Input 6-21 - DQ0-DQ15 - Data Inputs/Outputs 22 - VSS - Ground

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures energy efficiency in electronic devices.
• Large storage capacity of 1M x 16 bits provides ample space for data storage.
• Non-volatile memory retains stored data even when power is disconnected.
• Easy integration with other components simplifies the design and implementation process.

Advantages and Disadvantages

Advantages: - Fast and reliable data storage and retrieval. - Low power consumption enhances energy efficiency. - Large storage capacity meets the demands of various applications. - Non-volatile memory ensures data retention during power loss. - Easy integration with other components simplifies system design.

Disadvantages: - Limited compatibility with certain older systems or devices. - Higher cost compared to alternative memory technologies. - Sensitivity to electrostatic discharge (ESD) requires proper handling precautions.

Working Principles

The 71V016SA12BFG8 operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve data. When powered, the IC maintains the stored data as long as the power supply remains stable. The address inputs are used to select specific memory locations, while the control inputs (CE1, CE2, OE, WE) determine the read or write operations.

Detailed Application Field Plans

The 71V016SA12BFG8 finds application in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

• 71V016SA12BFGI
• 71V016SA12BFGI8
• 71V016SA12BFGI8G
• 71V016SA12BFGI8G8
• 71V016SA12BFGI8G8I

These alternative models offer similar functionality and specifications, providing options for different design requirements and availability from various manufacturers.

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