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71V25761S166PFG8

Encyclopedia Entry: 71V25761S166PFG8

Product Information Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable performance

Package: Plastic Fine-Pitch Ball Grid Array (FBGA)

Essence: The 71V25761S166PFG8 is a high-performance memory IC designed for various applications that require fast and efficient data storage and retrieval.

Packaging/Quantity: The 71V25761S166PFG8 is typically sold in reels or trays, with each reel containing a specific quantity of ICs.

Specifications

The specifications of the 71V25761S166PFG8 include:

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K words x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Standby Current: 5 mA (typical)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V25761S166PFG8 has a total of 48 pins, which are assigned specific functions for proper operation. The detailed pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. WE#
  20. I/O0
  21. I/O1
  22. I/O2
  23. I/O3
  24. I/O4
  25. I/O5
  26. I/O6
  27. I/O7
  28. I/O8
  29. I/O9
  30. I/O10
  31. I/O11
  32. I/O12
  33. I/O13
  34. I/O14
  35. I/O15
  36. GND
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

The 71V25761S166PFG8 offers the following functional features:

  • High-speed operation allows for quick data access and transfer.
  • Low power consumption ensures energy efficiency in various applications.
  • Large storage capacity of 256K words x 16 bits provides ample memory space.
  • Reliable performance guarantees stable and consistent data storage and retrieval.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable performance ensures data integrity and system stability.

Disadvantages: - Higher cost compared to other memory technologies. - Limited scalability beyond the specified storage capacity.

Working Principles

The 71V25761S166PFG8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store each bit of data, which can be accessed and modified at high speeds. The IC maintains the stored data as long as power is supplied, making it suitable for applications that require fast and frequent data access.

Detailed Application Field Plans

The 71V25761S166PFG8 finds application in various fields, including but not limited to:

  1. Computer systems and servers
  2. Networking equipment
  3. Telecommunications devices
  4. Industrial automation systems
  5. Automotive electronics
  6. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the 71V25761S166PFG8 include:

  1. MT48LC16M16A2TG-75: 256Mb SDRAM, 166MHz, TSOP II package.
  2. CY7C1049G30-10ZSXIT: 512K x 8 SRAM, 10ns, 3.3V, BGA package.
  3. IS42S16160D-7TLI: 256Mb DDR SDRAM, 143MHz, TFBGA package.

These alternative models can be considered based on specific application requirements and compatibility with existing systems.

Word count: 511 words

技術ソリューションにおける 71V25761S166PFG8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of 71V25761S166PFG8 in technical solutions:

  1. Q: What is the 71V25761S166PFG8? A: The 71V25761S166PFG8 is a specific model of synchronous SRAM (Static Random Access Memory) integrated circuit.

  2. Q: What is the capacity of the 71V25761S166PFG8? A: The 71V25761S166PFG8 has a capacity of 4 Megabits (4Mb) or 256K x 16 bits.

  3. Q: What is the operating voltage range for this IC? A: The operating voltage range for the 71V25761S166PFG8 is typically between 3.0V and 3.6V.

  4. Q: What is the access time of the 71V25761S166PFG8? A: The access time of this IC is typically around 10 ns, which refers to the time it takes to read or write data.

  5. Q: Can the 71V25761S166PFG8 be used in industrial applications? A: Yes, the 71V25761S166PFG8 is suitable for use in various industrial applications due to its reliability and performance.

  6. Q: Does this IC support multiple chip enable signals? A: Yes, the 71V25761S166PFG8 supports two chip enable signals (CE1 and CE2), allowing for flexible memory organization.

  7. Q: What is the power consumption of the 71V25761S166PFG8? A: The power consumption of this IC depends on the operating frequency and activity, but it is generally low for a SRAM device.

  8. Q: Can the 71V25761S166PFG8 operate at high temperatures? A: Yes, this IC is designed to operate reliably at extended temperature ranges, making it suitable for harsh environments.

  9. Q: Does the 71V25761S166PFG8 have built-in error correction capabilities? A: No, the 71V25761S166PFG8 does not have built-in error correction capabilities. Additional error correction techniques may be required.

  10. Q: What are some typical applications for the 71V25761S166PFG8? A: This IC can be used in various applications such as networking equipment, telecommunications systems, industrial control, and more.

Please note that the answers provided here are general and may vary depending on specific datasheet specifications and application requirements.