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71V25761S200BG8

Encyclopedia Entry: 71V25761S200BG8

Product Overview

Category

The 71V25761S200BG8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

  • High storage capacity
  • Fast access times
  • Low power consumption
  • Reliable performance

Package

The 71V25761S200BG8 is available in a compact integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information efficiently and reliably.

Packaging/Quantity

The 71V25761S200BG8 is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 20 ns
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 48-pin Ball Grid Array (BGA)

Detailed Pin Configuration

The 71V25761S200BG8 has a total of 48 pins, each serving a specific function. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. CE#
  20. WE#
  21. I/O0
  22. I/O1
  23. I/O2
  24. I/O3
  25. I/O4
  26. I/O5
  27. I/O6
  28. I/O7
  29. I/O8
  30. I/O9
  31. I/O10
  32. I/O11
  33. I/O12
  34. I/O13
  35. I/O14
  36. I/O15
  37. VSS
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed data access and retrieval
  • Non-volatile storage capability
  • Low power consumption in standby mode
  • Easy integration into electronic systems
  • Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

  • Fast access times enable efficient data processing
  • Reliable performance ensures data integrity
  • Low power consumption helps conserve energy
  • Compact package allows for space-saving designs

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Higher cost per bit compared to some alternative memory solutions

Working Principles

The 71V25761S200BG8 operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The 71V25761S200BG8 finds applications in various electronic systems, including but not limited to: - Computer motherboards - Networking equipment - Industrial control systems - Automotive electronics - Telecommunications devices

Detailed and Complete Alternative Models

  1. 71V25761S150BG8: Similar to the 71V25761S200BG8, but with a slightly lower access time of 15 ns.
  2. 71V25761S300BG8: Similar to the 71V25761S200BG8, but with a higher access time of 30 ns.
  3. 71V25761S400BG8: Similar to the 71V25761S200BG8, but with a higher storage capacity of 512K x 16 bits.

These alternative models offer different specifications to cater to specific application requirements.

In conclusion, the 71V25761S200BG8 is a high-performance SRAM memory device that provides fast and reliable data storage capabilities. Its compact package, low power consumption, and compatibility make it suitable for various electronic systems. While it may have limitations in terms of storage capacity and cost, alternative models are available to address specific needs.

技術ソリューションにおける 71V25761S200BG8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of 71V25761S200BG8 in technical solutions:

  1. Question: What is the maximum operating frequency of the 71V25761S200BG8?
    Answer: The maximum operating frequency of the 71V25761S200BG8 is 200 MHz.

  2. Question: What is the capacity of the 71V25761S200BG8?
    Answer: The 71V25761S200BG8 has a capacity of 256 megabits (32 megabytes).

  3. Question: What is the voltage supply range for the 71V25761S200BG8?
    Answer: The voltage supply range for this device is typically between 2.7V and 3.6V.

  4. Question: Does the 71V25761S200BG8 support multiple I/O interfaces?
    Answer: Yes, the 71V25761S200BG8 supports both asynchronous and synchronous interface options.

  5. Question: Can the 71V25761S200BG8 be used in industrial temperature environments?
    Answer: Yes, the 71V25761S200BG8 is designed to operate in industrial temperature ranges (-40°C to +85°C).

  6. Question: What is the access time of the 71V25761S200BG8?
    Answer: The access time of this device is typically 55 ns.

  7. Question: Does the 71V25761S200BG8 have built-in error correction capabilities?
    Answer: No, the 71V25761S200BG8 does not have built-in error correction capabilities.

  8. Question: Can the 71V25761S200BG8 be used as a standalone memory or does it require a controller?
    Answer: The 71V25761S200BG8 can be used as a standalone memory or with a memory controller, depending on the application requirements.

  9. Question: What is the package type of the 71V25761S200BG8?
    Answer: The 71V25761S200BG8 is available in a 119-ball BGA (Ball Grid Array) package.

  10. Question: Is the 71V25761S200BG8 RoHS compliant?
    Answer: Yes, the 71V25761S200BG8 is RoHS (Restriction of Hazardous Substances) compliant, ensuring it meets environmental regulations.

Please note that these answers are based on general information and may vary depending on specific datasheet specifications and application requirements.