Encyclopedia Entry: 71V321L25PFGI

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V321L25PFGI is a high-speed, low-power CMOS synchronous static RAM (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.

Characteristics: - High-speed operation - Low power consumption - Synchronous interface - Large storage capacity - Reliable performance

Package: The 71V321L25PFGI is available in a compact and durable plastic package, which protects the IC from external elements and ensures its longevity.

Essence: This IC serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity: The 71V321L25PFGI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 32 Megabits (4 Megabytes)
• Organization: 2,097,152 words x 16 bits
• Supply Voltage: 3.3V ± 0.3V
• Access Time: 25 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The 71V321L25PFGI features a total of 48 pins, each serving a specific function. Here is a detailed pin configuration:

1. VDDQ: Power supply voltage for I/O buffers
2. DQ0-DQ15: Data input/output pins
3. A0-A20: Address input pins
4. WE#: Write Enable input
5. OE#: Output Enable input
6. CE#: Chip Enable input
7. UB#/LB#: Upper Byte/Lower Byte control inputs
8. CLK: Clock input
9. VSSQ: Ground for I/O buffers

Functional Features

• High-speed synchronous operation allows for efficient data transfer.
• Low power consumption ensures energy efficiency in electronic devices.
• Reliable performance guarantees accurate and consistent data storage and retrieval.
• Large storage capacity accommodates a wide range of data-intensive applications.
• Synchronous interface simplifies the integration process with other components.

Advantages and Disadvantages

Advantages: - Fast access time enables quick data retrieval. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Reliable performance ensures data integrity.

Disadvantages: - Limited compatibility with certain older systems or devices. - Higher cost compared to alternative memory technologies. - Sensitivity to electrostatic discharge (ESD) requires proper handling precautions.

Working Principles

The 71V321L25PFGI operates based on the principles of synchronous static random-access memory (SRAM). It utilizes a clock signal to synchronize data transfers between the IC and the system it is integrated into. When enabled, the IC can read or write data from or to specific memory locations based on the address provided.

Detailed Application Field Plans

The 71V321L25PFGI finds application in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial automation systems - Consumer electronics

Its high-speed operation, large storage capacity, and reliable performance make it suitable for applications that require fast and efficient data storage and retrieval.

Detailed and Complete Alternative Models

While the 71V321L25PFGI offers excellent features and performance, there are alternative models available in the market that cater to different requirements. Some notable alternatives include: - 71V321L35PFGI: Offers a higher access time of 35 ns, suitable for less time-sensitive applications. - 71V64120S150BGI: Provides a larger storage capacity of 64 Megabits (8 Megabytes), ideal for data-intensive applications.

These alternative models offer flexibility in terms of access time, storage capacity, and other specifications, allowing users to choose the most suitable option for their specific needs.

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