Encyclopedia Entry: 71V3579S80PFGI

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V3579S80PFGI is a high-performance synchronous dynamic random-access memory (SDRAM) IC. It is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Large storage capacity - Low power consumption - Synchronous interface - Multiple banks for simultaneous access - On-chip burst counter

Package: The 71V3579S80PFGI is available in a compact and durable plastic package, which ensures protection against physical damage and environmental factors. The package type is typically a 54-pin TSOP (Thin Small Outline Package).

Essence: This IC serves as a crucial component in modern electronic devices, enabling efficient and reliable data storage and retrieval operations.

Packaging/Quantity: The 71V3579S80PFGI is usually sold in reels or trays, containing multiple units per package. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 4 Meg x 16
• Voltage Supply: 3.3V
• Clock Frequency: 133 MHz
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 54

Detailed Pin Configuration

The 71V3579S80PFGI features a 54-pin configuration with the following pin functions:

1. VDDQ: Power supply for I/O buffers
2. DQ0-DQ15: Data input/output pins
3. /CAS: Column Address Strobe
4. /RAS: Row Address Strobe
5. /WE: Write Enable
6. /CS: Chip Select
7. CLK: Clock input
8. VDD: Power supply for internal circuitry
9. VSS: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation: The 71V3579S80PFGI offers fast data access and transfer rates, making it suitable for applications that require quick processing.
• Multiple banks: It incorporates multiple memory banks, allowing simultaneous access to different areas of the memory array.
• Burst counter: On-chip burst counter enables efficient sequential data retrieval during burst mode operations.
• Low power consumption: The IC is designed to minimize power consumption, making it energy-efficient and suitable for battery-powered devices.

Advantages and Disadvantages

Advantages: - High-speed operation enhances overall system performance. - Large storage capacity accommodates extensive data requirements. - Low power consumption prolongs battery life in portable devices. - Synchronous interface simplifies system design and integration. - Multiple banks enable concurrent access, improving efficiency.

Disadvantages: - Limited compatibility with older systems that do not support synchronous interfaces. - Higher cost compared to traditional non-volatile memory technologies. - Sensitivity to electrical noise may require additional shielding or filtering measures.

Working Principles

The 71V3579S80PFGI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, organized into rows and columns. The row and column addresses are provided through the /RAS and /CAS signals, respectively. The /WE signal controls the write operation, while the /CS signal selects the chip for access. The CLK signal synchronizes the data transfer between the IC and the system.

During read operations, the requested data is retrieved from the specified row and column addresses and transferred to the output pins. Write operations involve storing data at the specified address. The burst counter facilitates sequential access to consecutive memory locations, improving overall efficiency.

Detailed Application Field Plans

The 71V3579S80PFGI finds applications in various electronic systems that require high-speed and reliable data storage, such as: - Computer systems (desktops, laptops, servers) - Networking equipment (routers, switches) - Telecommunications devices - Consumer electronics (smartphones, tablets, gaming consoles) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MT48LC4M16A2TG-7E: A similar SDRAM IC with a 4 Meg x 16 organization, operating at 133 MHz.
2. IS42S16400J-7TLI: Another SDRAM IC offering 4 Meg x 16 configuration, operating at 133 MHz.
3. HYB39S256160FE-7: Synchronous DRAM IC with a larger capacity of 256 Meg x 16, operating at 133 MHz.

(Note: The list above provides only a