Encyclopedia Entry: 71V416L15BE

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416L15BE is a high-speed, low-power CMOS static random access memory (SRAM) IC. It is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Easy integration into existing circuitry

Package: The 71V416L15BE is available in a standard 44-pin plastic small outline package (SOJ). This package provides protection to the IC and facilitates easy installation onto printed circuit boards (PCBs).

Essence: The essence of the 71V416L15BE lies in its ability to provide fast and efficient data storage and retrieval capabilities, making it an essential component in many electronic devices and systems.

Packaging/Quantity: Each package of the 71V416L15BE contains one IC.

Specifications

• Organization: 4 Meg x 16-bit
• Supply Voltage: 3.3V
• Access Time: 15 ns
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years

Detailed Pin Configuration

The 71V416L15BE has a total of 44 pins. The pin configuration is as follows:

1. A0-A20: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. VCC: Power Supply
7. GND: Ground

(Note: The remaining pins are not listed for brevity.)

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low power consumption ensures efficient energy usage.
• Large storage capacity of 4 Meg x 16-bit accommodates substantial amounts of data.
• Easy integration into existing circuitry simplifies the design process.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Easy integration reduces development time and costs.

Disadvantages: - Limited compatibility with older systems that require different voltage levels. - Relatively higher cost compared to lower-capacity SRAM ICs. - Sensitivity to electrostatic discharge (ESD) requires proper handling during installation and maintenance.

Working Principles

The 71V416L15BE operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain information as long as power is supplied. The address inputs determine the location where data is stored or retrieved, while the control signals (WE, OE, CE1, CE2) regulate read and write operations.

Detailed Application Field Plans

The 71V416L15BE finds application in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• 71V416L10BE: Similar to 71V416L15BE but with a faster access time of 10 ns.
• 71V416S10PHI: A low-power variant with a standby current of only 5 µA.
• 71V416S15YGI: Offers extended temperature range (-40°C to +125°C) for harsh environments.

(Note: The list of alternative models can be expanded based on the specific requirements and availability in the market.)

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