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71V416S10BEG

Encyclopedia Entry: 71V416S10BEG

Product Overview

Category

The 71V416S10BEG belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

  • High storage capacity
  • Fast access times
  • Low power consumption
  • Reliable data retention
  • Compatibility with various electronic systems

Package

The 71V416S10BEG is available in a compact package, designed to be easily integrated into electronic circuits.

Essence

The essence of the 71V416S10BEG lies in its ability to efficiently store and retrieve digital data, enhancing the performance of electronic systems.

Packaging/Quantity

This product is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

  • Storage Capacity: 4 Megabits (512K x 8)
  • Access Time: 10 nanoseconds
  • Operating Voltage: 3.3 volts
  • Standby Current: 10 microamps (max)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V416S10BEG features a pin configuration as follows:

  1. A0 - Address Input
  2. A1 - Address Input
  3. A2 - Address Input
  4. A3 - Address Input
  5. A4 - Address Input
  6. A5 - Address Input
  7. A6 - Address Input
  8. A7 - Address Input
  9. VCC - Power Supply
  10. WE - Write Enable
  11. OE - Output Enable
  12. CE - Chip Enable
  13. DQ0 - Data Input/Output
  14. DQ1 - Data Input/Output
  15. DQ2 - Data Input/Output
  16. DQ3 - Data Input/Output
  17. DQ4 - Data Input/Output
  18. DQ5 - Data Input/Output
  19. DQ6 - Data Input/Output
  20. DQ7 - Data Input/Output
  21. VSS - Ground

Functional Features

  • Random access to stored data
  • High-speed read and write operations
  • Low power consumption in standby mode
  • Easy integration into electronic systems
  • Compatibility with various interface standards

Advantages and Disadvantages

Advantages

  • High storage capacity allows for the storage of large amounts of data
  • Fast access times enable quick retrieval of information
  • Low power consumption helps conserve energy in electronic systems
  • Reliable data retention ensures the integrity of stored information
  • Compatibility with various electronic systems enhances versatility

Disadvantages

  • Limited storage capacity compared to higher-end memory devices
  • Relatively slower access times compared to some newer memory technologies
  • Vulnerable to physical damage if mishandled or exposed to extreme conditions

Working Principles

The 71V416S10BEG operates based on the principles of semiconductor memory technology. It utilizes a combination of transistors and capacitors to store and retrieve digital information. When an address is provided, the memory controller activates the appropriate circuitry to read or write data from/to the specified location.

Detailed Application Field Plans

The 71V416S10BEG finds applications in various electronic systems, including but not limited to: - Personal computers - Embedded systems - Communication devices - Consumer electronics - Automotive electronics

Detailed and Complete Alternative Models

  1. 71V416L10PHG - Similar specifications, but with lower power consumption.
  2. 71V416Y10PHI - Higher storage capacity (8 Megabits) with similar characteristics.
  3. 71V416Z10PEG - Enhanced performance with faster access times (8 nanoseconds).

These alternative models offer similar functionality and can be considered based on specific requirements.


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技術ソリューションにおける 71V416S10BEG の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of 71V416S10BEG in technical solutions:

  1. Q: What is the 71V416S10BEG? A: The 71V416S10BEG is a specific model of synchronous static RAM (SRAM) integrated circuit.

  2. Q: What is the capacity of the 71V416S10BEG? A: The 71V416S10BEG has a capacity of 4 megabits (4Mbit) or 512 kilobytes (512KB).

  3. Q: What is the operating voltage range for the 71V416S10BEG? A: The 71V416S10BEG operates within a voltage range of 3.0V to 3.6V.

  4. Q: What is the access time of the 71V416S10BEG? A: The 71V416S10BEG has an access time of 10 nanoseconds (ns).

  5. Q: Can the 71V416S10BEG be used in battery-powered devices? A: Yes, the 71V416S10BEG can be used in battery-powered devices as it operates within a low voltage range.

  6. Q: Does the 71V416S10BEG support multiple read and write operations simultaneously? A: No, the 71V416S10BEG does not support simultaneous multiple read and write operations.

  7. Q: Is the 71V416S10BEG compatible with various microcontrollers and processors? A: Yes, the 71V416S10BEG is compatible with a wide range of microcontrollers and processors.

  8. Q: Can the 71V416S10BEG be used in industrial applications with extended temperature ranges? A: Yes, the 71V416S10BEG is designed to operate within an extended temperature range of -40°C to +85°C.

  9. Q: Does the 71V416S10BEG have any built-in error correction capabilities? A: No, the 71V416S10BEG does not have built-in error correction capabilities.

  10. Q: What are some typical applications for the 71V416S10BEG? A: The 71V416S10BEG is commonly used in various technical solutions such as networking equipment, telecommunications systems, and embedded systems where fast and reliable data storage is required.

Please note that these answers are general and may vary depending on the specific requirements and use cases of the application.