Encyclopedia Entry: 71V416S10PHG

Product Information Overview

Category

The 71V416S10PHG belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V416S10PHG is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The 71V416S10PHG is typically packaged individually and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Supply Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Package Type: Plastic Small Outline J-lead (SOJ)

Detailed Pin Configuration

The 71V416S10PHG has a total of 32 pins, which are assigned specific functions as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. VCC: Power Supply
7. GND: Ground

Functional Features

• High-speed access: The 71V416S10PHG offers fast data access, allowing for efficient read and write operations.
• Low power consumption: This device is designed to minimize power usage, making it suitable for battery-powered applications.
• Reliable performance: The product ensures data integrity and stability, providing reliable operation in various environments.

Advantages and Disadvantages

Advantages

• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per bit compared to alternative memory options.

Working Principles

The 71V416S10PHG operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. The address inputs are used to select specific memory locations, while the data inputs/outputs facilitate the transfer of information between the device and the external system.

Detailed Application Field Plans

The 71V416S10PHG finds application in various electronic systems, including but not limited to: - Computer motherboards - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. 71V416L10PHG: Similar to the 71V416S10PHG, but with a lower operating voltage of 2.5V.
2. 71V816S10PHG: Double the capacity of the 71V416S10PHG, offering 8 Megabits (8Mbit) of storage.
3. 71V432S10PHG: Quadruple the capacity of the 71V416S10PHG, providing 16 Megabits (16Mbit) of memory.

These alternative models offer similar functionality but cater to different requirements in terms of capacity and voltage specifications.

In conclusion, the 71V416S10PHG is a high-speed, low-power semiconductor memory device that provides reliable data storage and retrieval capabilities. Its compact package, functional features, and wide range of applications make it a valuable component in various electronic systems.

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