71V416S12YG

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: High-speed, low-power, non-volatile
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile Static Random Access Memory (nvSRAM)
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Memory Size: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Supply Voltage: 3.0V to 3.6V
• Access Time: 12 ns
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V416S12YG has a total of 44 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE1 - Chip Enable Input
18. CE2 - Chip Enable Input
19. OE - Output Enable Input
20. WE - Write Enable Input
21. I/O0 - Data Input/Output
22. I/O1 - Data Input/Output
23. I/O2 - Data Input/Output
24. I/O3 - Data Input/Output
25. I/O4 - Data Input/Output
26. I/O5 - Data Input/Output
27. I/O6 - Data Input/Output
28. I/O7 - Data Input/Output
29. VCC - Power Supply
30. GND - Ground
31. NC - No Connection
32. NC - No Connection
33. NC - No Connection
34. NC - No Connection
35. NC - No Connection
36. NC - No Connection
37. NC - No Connection
38. NC - No Connection
39. NC - No Connection
40. NC - No Connection
41. NC - No Connection
42. NC - No Connection
43. NC - No Connection
44. NC - No Connection

Functional Features

• Non-volatile memory: Retains data even when power is lost
• High-speed access: 12 ns access time for quick data retrieval
• Low-power consumption: Standby current of only 10 µA
• Reliable operation: Built-in error detection and correction mechanisms
• Easy integration: Compatible with standard memory interfaces

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data integrity during power interruptions - Fast access time allows for efficient data processing - Low-power consumption extends battery life in portable devices - Error detection and correction mechanisms enhance reliability

Disadvantages: - Limited memory size compared to other storage options - Higher cost per bit compared to traditional volatile memory - Requires specific interface support for proper integration

Working Principles

The 71V416S12YG utilizes non-volatile Static Random Access Memory (nvSRAM) technology. It combines the speed and ease of use of SRAM with the non-volatility of Flash memory. The memory cells store data using a combination of transistors and capacitors, ensuring data retention even when power is lost. The chip's control circuitry manages the read and write operations, enabling fast access times and reliable data storage.

Detailed Application Field Plans

The 71V416S12YG is suitable for various applications that require non-volatile memory with high-speed access. Some potential application fields include: - Industrial automation systems - Automotive electronics - Medical devices - Aerospace and defense equipment - Communication infrastructure

Detailed and Complete Alternative Models

1. 71V416L10PH - 4Mbit Low Power SRAM
2. 71V416L15PH - 4Mbit Low Power SRAM
3. 71V416L20PH - 4Mbit Low Power SRAM
4. 71V416L25PH - 4Mbit Low Power SRAM
5. 71V416L35PH - 4Mbit Low Power SRAM

These alternative models offer similar functionality and characteristics to the 71V416S12YG but may have different specifications or package options.

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