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71V424S10PHG8

71V424S10PHG8

Basic Information Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory chip
  • Characteristics:
    • High-speed operation
    • Low power consumption
    • Small form factor
  • Package: SOP (Small Outline Package)
  • Essence: Non-volatile memory storage
  • Packaging/Quantity: Available in reels of 2500 units

Specifications

  • Memory Type: Flash
  • Memory Size: 4 Megabits (512 Kilobytes)
  • Organization: 512K x 8 bits
  • Supply Voltage: 2.7V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Access Time: 70 ns
  • Erase/Program Suspend: Yes
  • Data Retention: 20 years
  • Endurance: 100,000 erase/write cycles

Detailed Pin Configuration

The 71V424S10PHG8 IC has the following pin configuration:

  1. VCC - Power supply voltage
  2. A0-A18 - Address inputs
  3. CE - Chip enable input
  4. OE - Output enable input
  5. WE - Write enable input
  6. I/O0-I/O7 - Data input/output lines
  7. RY/BY# - Ready/Busy output
  8. WP# - Write protect input
  9. RESET# - Reset input
  10. GND - Ground

Functional Features

  • High-speed operation allows for quick data access and transfer.
  • Low power consumption ensures efficient energy usage.
  • Small form factor enables integration into compact electronic devices.
  • Erase/program suspend feature allows for interruption and resumption of memory operations.
  • Data retention of up to 20 years ensures long-term data integrity.
  • High endurance with support for 100,000 erase/write cycles.

Advantages and Disadvantages

Advantages: - Fast operation speed - Low power consumption - Compact size - Reliable data retention - High endurance

Disadvantages: - Limited memory size (4 Megabits) - Requires external components for proper integration

Working Principles

The 71V424S10PHG8 is a flash memory chip that utilizes floating-gate transistors to store data. It operates by applying voltage to specific memory cells, allowing electrons to be trapped or released in the floating gate. This trapped charge represents the stored data. The chip uses various control inputs to enable reading, writing, and erasing of data.

Detailed Application Field Plans

The 71V424S10PHG8 is commonly used in the following applications:

  1. Consumer Electronics:

    • Digital cameras
    • Set-top boxes
    • Portable media players
  2. Automotive Systems:

    • Infotainment systems
    • Engine control units
    • Advanced driver-assistance systems (ADAS)
  3. Industrial Equipment:

    • Programmable logic controllers (PLCs)
    • Human-machine interfaces (HMIs)
    • Data loggers

Detailed and Complete Alternative Models

  1. 71V424S10PHG - Similar specifications but with a different package (TSOP)
  2. 71V424S10PHI8 - Higher operating temperature range (-40°C to +105°C)
  3. 71V424S10PHG6 - Lower access time (60 ns) but higher power consumption

Note: Please refer to the manufacturer's datasheet for a comprehensive list of alternative models.

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技術ソリューションにおける 71V424S10PHG8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of 71V424S10PHG8 in technical solutions:

  1. Question: What is the purpose of the 71V424S10PHG8 in technical solutions?
    Answer: The 71V424S10PHG8 is a high-speed, low-power CMOS SRAM that provides reliable memory storage for various technical applications.

  2. Question: What is the capacity of the 71V424S10PHG8?
    Answer: The 71V424S10PHG8 has a capacity of 4 megabits (Mbit), which is equivalent to 512 kilobytes (KB).

  3. Question: What is the operating voltage range for this SRAM?
    Answer: The 71V424S10PHG8 operates within a voltage range of 3.0V to 3.6V.

  4. Question: Can the 71V424S10PHG8 be used in battery-powered devices?
    Answer: Yes, the low-power design of the 71V424S10PHG8 makes it suitable for use in battery-powered devices, helping to conserve energy.

  5. Question: What is the access time of this SRAM?
    Answer: The 71V424S10PHG8 has an access time of 10 nanoseconds (ns), ensuring fast and efficient data retrieval.

  6. Question: Does the 71V424S10PHG8 support multiple read and write operations simultaneously?
    Answer: Yes, the 71V424S10PHG8 supports simultaneous read and write operations, allowing for efficient data processing.

  7. Question: Is the 71V424S10PHG8 compatible with different interface standards?
    Answer: Yes, the 71V424S10PHG8 is compatible with both asynchronous and synchronous interface standards, providing flexibility in integration.

  8. Question: Can the 71V424S10PHG8 withstand harsh environmental conditions?
    Answer: The 71V424S10PHG8 is designed to operate reliably in industrial temperature ranges, making it suitable for various environments.

  9. Question: Does the 71V424S10PHG8 have built-in error correction capabilities?
    Answer: No, the 71V424S10PHG8 does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.

  10. Question: Are there any specific application examples where the 71V424S10PHG8 is commonly used?
    Answer: Yes, the 71V424S10PHG8 is often used in networking equipment, telecommunications systems, industrial automation, and other high-performance applications that require reliable memory storage.

Please note that these questions and answers are based on general information about the 71V424S10PHG8 SRAM. For specific technical details and application requirements, it is recommended to refer to the product datasheet or consult with the manufacturer.