71V424S10YG8

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, non-volatile
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile Static Random Access Memory (nvSRAM)
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Size: 4 Megabits (512K x 8)
• Supply Voltage: 3.0V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 20 ns
• Standby Current: 30 µA (typical)
• Data Retention: 20 years

Detailed Pin Configuration

The 71V424S10YG8 IC has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. OE#
20. WE#
21. NC
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. VSS
31. VCAP
32. VCAP
33. VCAP
34. VCAP
35. VCAP
36. VCAP
37. VCAP
38. VCAP
39. VCAP
40. VCAP
41. VCAP
42. VCAP
43. VCAP
44. VCAP
45. VCAP
46. VCAP
47. VCAP
48. VCAP

Functional Features

• Non-volatile memory: Retains data even when power is lost
• High-speed operation: Access time of 20 ns allows for quick data retrieval
• Low-power consumption: Standby current of only 30 µA extends battery life
• Easy integration: Compatible with standard SRAM interfaces
• Automatic store on power loss: Ensures data integrity during power interruptions

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data retention even in the absence of power - High-speed operation enables fast data access - Low-power consumption prolongs battery life - Easy integration with existing systems

Disadvantages: - Relatively small memory size compared to other storage devices - Limited temperature range for operation (-40°C to +85°C)

Working Principles

The 71V424S10YG8 is a non-volatile static random access memory (nvSRAM) that combines the benefits of both SRAM and non-volatile memory technologies. It utilizes a ferroelectric capacitor to store data, which retains its polarization state even when power is removed. This allows the device to retain data without the need for a constant power supply.

During normal operation, the nvSRAM behaves like a standard SRAM, providing high-speed read and write access. When power is lost or intentionally turned off, the device automatically stores the contents of the SRAM into the non-volatile ferroelectric memory cells. Upon power restoration, the stored data is automatically restored back to the SRAM, ensuring data integrity.

Detailed Application Field Plans

The 71V424S10YG8 is commonly used in applications that require non-volatile memory with high-speed operation. Some potential application fields include: - Industrial control systems - Automotive electronics - Medical devices - Aerospace and defense systems - Data logging and storage devices

Detailed and Complete Alternative Models

1. 71V424S10Y - Same specifications, different package (SOJ)
2. 71V424S10PHI - Same specifications, extended temperature range (-40°C to +125°C)
3. 71V424S10YG - Same specifications, smaller quantity per reel (1000 units)

These alternative models offer similar functionality and performance but may vary in package type, temperature range, or packaging quantity.

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