Encyclopedia Entry: 71V65803S100BGGI
Product Information Overview
Category: Integrated Circuit (IC)
Use: The 71V65803S100BGGI is a high-performance synchronous dynamic random-access memory (SDRAM) IC. It is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.
Characteristics: - High-speed operation - Large storage capacity - Low power consumption - Synchronous interface - Multiple banks for concurrent access - Error correction capabilities
Package: The 71V65803S100BGGI is typically available in a compact Ball Grid Array (BGA) package, which provides excellent thermal performance and allows for easy integration onto printed circuit boards (PCBs).
Essence: This IC serves as a crucial component in modern electronic devices, enabling efficient data storage and retrieval operations.
Packaging/Quantity: The 71V65803S100BGGI is usually sold in reels or trays, with each reel or tray containing a specific quantity of ICs, typically ranging from a few hundred to several thousand units.
Specifications
- Memory Type: Synchronous DRAM (SDRAM)
- Organization: 8 Meg x 8
- Voltage Supply: 3.3V
- Clock Frequency: 100 MHz
- Access Time: 10 ns
- Operating Temperature Range: -40°C to +85°C
- Package Type: BGA
- Pin Count: 100
Detailed Pin Configuration
The 71V65803S100BGGI features a 100-pin BGA package with the following pin configuration:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- NC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- VDD
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- VSS
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- VDD
- /CAS
- /RAS
- /WE
- /CS
- /CKE
- /BA0
- /BA1
- VSS
- DQM0
- DQM1
- VDDQ
- DQ8
- DQ9
- DQ10
- DQ11
- DQ12
- DQ13
- DQ14
- DQ15
- VSSQ
- NC
- DM0
- DM1
- VDDQ
- DQ16
- DQ17
- DQ18
- DQ19
- DQ20
- DQ21
- DQ22
- DQ23
- VSSQ
- NC
- DQ24
- DQ25
- DQ26
- DQ27
- DQ28
- DQ29
- DQ30
- DQ31
- VDDQ
- NC
- /CK
- VSS
- VDD
- VREF
- VSS
- VDD
- VSS
- VDD
- VSS
- VDD
- VSS
- VDD
- VSS
- VDD
- VSS
- VDD
- VSS
- VDD
Functional Features
The 71V65803S100BGGI offers the following functional features:
- High-speed operation: The IC operates at a clock frequency of 100 MHz, allowing for rapid data access and transfer.
- Synchronous interface: The synchronous design ensures precise timing synchronization between the memory controller and the IC, enhancing overall system performance.
- Multiple banks: The IC incorporates multiple banks, enabling concurrent access to different memory locations and improving efficiency.
- Error correction capabilities: The 71V65803S100BGGI supports error correction codes (
技術ソリューションにおける 71V65803S100BGGI の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure! Here are 10 common questions and answers related to the application of 71V65803S100BGGI in technical solutions:
Question: What is the purpose of the 71V65803S100BGGI in technical solutions?
Answer: The 71V65803S100BGGI is a high-speed synchronous SRAM that provides fast and reliable memory storage for various technical applications.Question: What is the maximum operating frequency of the 71V65803S100BGGI?
Answer: The 71V65803S100BGGI can operate at a maximum frequency of 100 MHz, making it suitable for high-performance applications.Question: How much memory does the 71V65803S100BGGI provide?
Answer: The 71V65803S100BGGI offers a total memory capacity of 8 megabits (1 megabyte) organized as 512K words by 16 bits.Question: Can the 71V65803S100BGGI be used in low-power applications?
Answer: Yes, the 71V65803S100BGGI features a power-down mode that reduces power consumption when the device is not actively being accessed.Question: What is the voltage supply range for the 71V65803S100BGGI?
Answer: The 71V65803S100BGGI operates with a voltage supply range of 3.0V to 3.6V, making it compatible with standard power supplies.Question: Does the 71V65803S100BGGI support burst mode operations?
Answer: Yes, the 71V65803S100BGGI supports both burst read and burst write operations, allowing for efficient data transfer.Question: Can the 71V65803S100BGGI be used in industrial temperature environments?
Answer: Yes, the 71V65803S100BGGI is designed to operate reliably in a wide temperature range from -40°C to +85°C, making it suitable for industrial applications.Question: Does the 71V65803S100BGGI have any built-in error correction capabilities?
Answer: No, the 71V65803S100BGGI does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.Question: What is the package type of the 71V65803S100BGGI?
Answer: The 71V65803S100BGGI is available in a 119-ball BGA (Ball Grid Array) package, which provides good electrical and thermal performance.Question: Is the 71V65803S100BGGI compatible with other standard memory interfaces?
Answer: Yes, the 71V65803S100BGGI is compatible with industry-standard synchronous SRAM interfaces, making it easy to integrate into existing designs.
Please note that these questions and answers are based on general information about the 71V65803S100BGGI and may vary depending on specific application requirements.