71V67803S133BG8

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Flash
• Memory Size: 8 Megabits (1 Megabyte)
• Organization: 512K x 16
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns
• Interface: Parallel
• Package Type: 48-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

Pin Number | Pin Name | Description --- | --- | --- 1 | A0 | Address Input 2 | A1 | Address Input 3 | A2 | Address Input 4 | A3 | Address Input 5 | A4 | Address Input 6 | A5 | Address Input 7 | A6 | Address Input 8 | A7 | Address Input 9 | A8 | Address Input 10 | A9 | Address Input 11 | A10 | Address Input 12 | A11 | Address Input 13 | A12 | Address Input 14 | A13 | Address Input 15 | A14 | Address Input 16 | A15 | Address Input 17 | VCC | Power Supply 18 | /CE | Chip Enable Input 19 | /OE | Output Enable Input 20 | WE | Write Enable Input 21-28 | DQ0-DQ7 | Data Input/Output 29 | /WP | Write Protect Input 30 | /ACC | Acceleration Input 31 | /RESET | Reset Input 32-39 | DQ8-DQ15 | Data Input/Output 40 | VSS | Ground 41-48 | NC | No Connection

Functional Features

• High-speed data transfer with an access time of 70 ns
• Low-power consumption for energy-efficient operation
• Non-volatile memory storage ensures data retention even when power is lost
• Write protection feature to prevent accidental modification of stored data
• Acceleration input for enhanced performance in specific applications
• Reset input for system initialization and recovery

Advantages and Disadvantages

Advantages: - Fast access time allows for quick retrieval of data - Low-power consumption extends battery life in portable devices - Non-volatile memory ensures data integrity during power interruptions - Write protection prevents unauthorized modifications - Acceleration input enhances performance in specialized scenarios

Disadvantages: - Limited memory size may not be sufficient for certain applications - Parallel interface may require additional circuitry for compatibility with modern systems - Operating temperature range may restrict usage in extreme environments

Working Principles

The 71V67803S133BG8 is a flash memory device that utilizes floating-gate transistors to store data. It operates by applying electrical charges to the floating gates, which trap electrons and alter the transistor's conductive properties. This allows the device to retain information even when power is removed. The parallel interface enables fast data transfer between the memory and the host system.

Detailed Application Field Plans

The 71V67803S133BG8 is commonly used in various electronic devices that require non-volatile memory storage, such as: - Consumer electronics (e.g., digital cameras, MP3 players) - Communication equipment (e.g., routers, switches) - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

1. 71V67803S133BGI8: Similar to 71V67803S133BG8, but with industrial temperature range (-40°C to +105°C).
2. 71V67803S133BGG8: Similar to 71V67803S133BG8, but with extended temperature range (-55°C to +125°C).
3. 71V67803S133BGR8: Similar to 71V67803S133BG8, but with automotive temperature range (-40°C to +125°C).

These alternative models offer different temperature ranges to suit specific application requirements.

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