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IDT6116SA35SO

IDT6116SA35SO

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory chip
  • Characteristics: Static Random Access Memory (SRAM), 2K x 8-bit organization, 35ns access time
  • Package: Small Outline (SO)
  • Essence: High-speed memory storage solution
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Organization: 2K x 8-bit
  • Access Time: 35ns
  • Voltage Range: 4.5V to 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Standby Current: 100μA (maximum)
  • Operating Current: 30mA (maximum)

Detailed Pin Configuration

The IDT6116SA35SO package consists of 24 pins, which are assigned as follows:

  1. A9
  2. A8
  3. A7
  4. A6
  5. A5
  6. A4
  7. A3
  8. A2
  9. A1
  10. A0
  11. DQ0
  12. DQ1
  13. DQ2
  14. DQ3
  15. DQ4
  16. DQ5
  17. DQ6
  18. DQ7
  19. Vcc
  20. GND
  21. CE1
  22. CE2
  23. OE
  24. WE

Functional Features

  • High-speed access: The IDT6116SA35SO offers a fast access time of 35ns, allowing for quick retrieval and storage of data.
  • Low power consumption: With a standby current of only 100μA and an operating current of 30mA, this memory chip is energy-efficient.
  • Reliable performance: The SRAM technology ensures reliable and stable data storage.
  • Easy integration: The small outline package allows for easy integration into various electronic devices.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Reliable performance ensures data integrity. - Small outline package facilitates space-saving designs.

Disadvantages: - Limited storage capacity (2K x 8-bit). - Higher cost compared to other memory technologies like Dynamic RAM (DRAM).

Working Principles

The IDT6116SA35SO is a static random access memory (SRAM) chip. It stores data using flip-flops, which retain information as long as power is supplied. When an address is provided, the chip retrieves the corresponding data from the memory array. The control signals (CE1, CE2, OE, WE) govern the read and write operations, allowing for efficient data transfer.

Detailed Application Field Plans

The IDT6116SA35SO is commonly used in various applications, including:

  1. Embedded Systems: Used as cache memory in microcontrollers and microprocessors to enhance system performance.
  2. Communication Devices: Employed in networking equipment, routers, and switches for fast data buffering.
  3. Industrial Automation: Utilized in programmable logic controllers (PLCs) for storing critical data and program instructions.
  4. Automotive Electronics: Integrated into automotive systems for data storage and retrieval in applications such as infotainment systems and engine control units.

Detailed and Complete Alternative Models

  1. IDT6116LA/LA-15: Similar specifications with a lower access time of 15ns.
  2. IDT6116SA/SB/SB-15: Variants with different package options (SOIC, PDIP) and access times (15ns).
  3. IDT6116SA/SB/SB-25: Variants with different access times (25ns) and package options (SOIC, PDIP).

These alternative models provide flexibility in terms of access time, package type, and compatibility with different system requirements.

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技術ソリューションにおける IDT6116SA35SO の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT6116SA35SO in technical solutions:

  1. Question: What is IDT6116SA35SO?
    Answer: IDT6116SA35SO is a specific model of static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT6116SA35SO?
    Answer: The IDT6116SA35SO has a capacity of 2 kilobits (Kb), which is equivalent to 256 bytes.

  3. Question: What is the operating voltage range for IDT6116SA35SO?
    Answer: The IDT6116SA35SO operates within a voltage range of 4.5V to 5.5V.

  4. Question: What is the access time of IDT6116SA35SO?
    Answer: The access time of IDT6116SA35SO is 35 nanoseconds (ns), which refers to the time it takes to read or write data from/to the memory.

  5. Question: Can IDT6116SA35SO be used in battery-powered devices?
    Answer: Yes, IDT6116SA35SO can be used in battery-powered devices as it operates within a low voltage range and consumes minimal power.

  6. Question: Is IDT6116SA35SO suitable for high-speed applications?
    Answer: No, IDT6116SA35SO is not designed for high-speed applications due to its relatively slower access time compared to other SRAM chips available in the market.

  7. Question: Can IDT6116SA35SO be used in embedded systems?
    Answer: Yes, IDT6116SA35SO can be used in embedded systems where low power consumption and moderate memory capacity are required.

  8. Question: Does IDT6116SA35SO support multiple read/write operations simultaneously?
    Answer: No, IDT6116SA35SO does not support simultaneous read/write operations. It can only perform one operation at a time.

  9. Question: What is the package type of IDT6116SA35SO?
    Answer: IDT6116SA35SO comes in a 24-pin small outline (SO) package.

  10. Question: Can IDT6116SA35SO be used as a replacement for other SRAM chips with similar specifications?
    Answer: Yes, IDT6116SA35SO can be used as a drop-in replacement for other 2Kb SRAM chips with compatible pin configurations and voltage requirements.