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IDT6116SA45SOI8

IDT6116SA45SOI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory chip
  • Characteristics: High-speed, low-power, static random-access memory (SRAM)
  • Package: SOI8 (Small Outline Integrated Circuit 8-pin package)
  • Essence: Provides non-volatile storage of digital data in electronic devices
  • Packaging/Quantity: Sold in reels or tubes, typically in quantities of 1000 units

Specifications

  • Memory Size: 2 kilobits (256 x 8 bits)
  • Operating Voltage: 4.5V
  • Access Time: 45 nanoseconds
  • Standby Current: 10 microamps
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT6116SA45SOI8 has the following pin configuration:

  1. Chip Enable (CE)
  2. Output Enable (OE)
  3. Write Enable (WE)
  4. Data Input/Output (DQ0)
  5. Data Input/Output (DQ1)
  6. Data Input/Output (DQ2)
  7. Data Input/Output (DQ3)
  8. Vcc (Power Supply)

Functional Features

  • High-speed access and retrieval of stored data
  • Low power consumption during standby mode
  • Easy integration into various electronic devices
  • Reliable data retention even in harsh environmental conditions
  • Compatibility with a wide range of microcontrollers and processors

Advantages and Disadvantages

Advantages: - Fast access time allows for efficient data processing - Low power consumption extends battery life in portable devices - Compact package size enables space-saving designs - Wide operating temperature range ensures reliability in different environments

Disadvantages: - Limited memory capacity compared to modern memory chips - Relatively higher cost per kilobit compared to larger capacity chips - Not suitable for applications requiring large amounts of data storage

Working Principles

The IDT6116SA45SOI8 is a static random-access memory (SRAM) chip. It stores digital data using flip-flop circuits, which retain their state as long as power is supplied. The chip utilizes a combination of transistors and capacitors to store and retrieve data quickly. When the chip enable (CE), output enable (OE), and write enable (WE) signals are appropriately controlled, data can be read from or written to the memory array.

Detailed Application Field Plans

The IDT6116SA45SOI8 is commonly used in various electronic devices that require non-volatile storage of small amounts of data. Some typical application fields include:

  1. Embedded Systems: Used as cache memory in microcontrollers and processors.
  2. Industrial Control Systems: Stores configuration settings and temporary data.
  3. Automotive Electronics: Provides storage for sensor data and system parameters.
  4. Medical Devices: Stores patient information and device settings.
  5. Communication Equipment: Used for buffering and temporary data storage.

Detailed and Complete Alternative Models

  1. IDT6116SA70SOI8: Similar to IDT6116SA45SOI8 but with a faster access time of 70 nanoseconds.
  2. IDT6116SA90SOI8: Similar to IDT6116SA45SOI8 but with a slower access time of 90 nanoseconds.
  3. IDT6116SA120SOI8: Similar to IDT6116SA45SOI8 but with an even slower access time of 120 nanoseconds.

These alternative models provide options for different speed requirements while maintaining similar functionality and pin configuration.

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技術ソリューションにおける IDT6116SA45SOI8 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. Question: What is IDT6116SA45SOI8?
    Answer: IDT6116SA45SOI8 is a specific model of an integrated circuit (IC) chip, commonly known as a static random-access memory (SRAM) chip.

  2. Question: What is the capacity of IDT6116SA45SOI8?
    Answer: The IDT6116SA45SOI8 has a capacity of 2 kilobits (Kb), which is equivalent to 256 bytes.

  3. Question: What is the operating voltage range for IDT6116SA45SOI8?
    Answer: The operating voltage range for IDT6116SA45SOI8 is typically between 4.5 volts and 5.5 volts.

  4. Question: What is the access time of IDT6116SA45SOI8?
    Answer: The access time of IDT6116SA45SOI8 is 45 nanoseconds (ns), which refers to the time it takes for data to be read from or written to the memory.

  5. Question: Can IDT6116SA45SOI8 be used in battery-powered devices?
    Answer: Yes, IDT6116SA45SOI8 can be used in battery-powered devices as long as the operating voltage range is within the power supply capabilities of the device.

  6. Question: Is IDT6116SA45SOI8 compatible with other IC chips?
    Answer: Yes, IDT6116SA45SOI8 is designed to be compatible with standard SRAM interfaces, making it suitable for use with various microcontrollers and other digital devices.

  7. Question: Can IDT6116SA45SOI8 be used in industrial applications?
    Answer: Yes, IDT6116SA45SOI8 is suitable for use in industrial applications due to its reliable performance and wide operating temperature range.

  8. Question: What are the typical applications of IDT6116SA45SOI8?
    Answer: Some typical applications of IDT6116SA45SOI8 include data storage, buffering, cache memory, and general-purpose memory in various electronic systems.

  9. Question: Does IDT6116SA45SOI8 require any external components for operation?
    Answer: Yes, IDT6116SA45SOI8 typically requires decoupling capacitors and pull-up resistors for proper operation, as specified in the datasheet.

  10. Question: Can IDT6116SA45SOI8 be easily replaced with other SRAM chips?
    Answer: In most cases, IDT6116SA45SOI8 can be replaced with other compatible SRAM chips, but it is important to consider the specific requirements and pin configurations of the target application.