IDT71124S12YGI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 119-ball grid array (BGA)
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 12 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Guaranteed data retention without refresh
• Interface: Synchronous interface with common I/O

Detailed Pin Configuration

The IDT71124S12YGI8 has a total of 119 pins. The pin configuration is as follows:

• Pins 1-4: Address Inputs (A0-A3)
• Pins 5-12: Address Inputs (A4-A11)
• Pins 13-20: Address Inputs (A12-A19)
• Pins 21-28: Data Inputs/Outputs (DQ0-DQ7)
• Pins 29-36: Data Inputs/Outputs (DQ8-DQ15)
• Pins 37-44: Data Inputs/Outputs (DQ16-DQ23)
• Pins 45-52: Data Inputs/Outputs (DQ24-DQ31)
• Pins 53-56: Chip Enable (CE#, CE2#)
• Pins 57-60: Output Enable (OE#, OE2#)
• Pins 61-64: Write Enable (WE#, WE2#)
• Pins 65-68: Byte Enable (BE#, BE2#)
• Pins 69-72: Clock Inputs (CLK, CLK2)
• Pins 73-76: Clock Enable (CKE#, CKE2#)
• Pins 77-80: Address Strobe (ADS#, ADS2#)
• Pins 81-84: Data Mask (DM#, DM2#)
• Pins 85-88: Burst Address Inputs (BA0-BA3)
• Pins 89-92: Burst Length Control (BL0-BL3)
• Pins 93-96: Burst Type Control (BT0-BT3)
• Pins 97-100: Write Protect (WP#, WP2#)
• Pins 101-104: Power Supply (VDD, VDDQ)
• Pins 105-108: Ground (GND)
• Pins 109-112: No Connection (NC)
• Pins 113-116: Termination Resistors (RTT0, RTT1)
• Pins 117-119: Termination Voltage (VTT)

Functional Features

• High-speed operation allows for quick data access and transfer
• Low-power consumption ensures efficient use of energy
• Synchronous interface enables synchronized communication with other components
• Guaranteed data retention without the need for periodic refresh cycles
• Wide operating temperature range makes it suitable for various environments

Advantages and Disadvantages

Advantages

• High-speed performance enhances overall system efficiency
• Low-power consumption prolongs battery life in portable devices
• Synchronous interface simplifies system design and integration
• Guaranteed data retention eliminates the need for additional memory management

Disadvantages

• Limited memory size compared to newer generations of SRAM
• Higher cost per bit compared to other memory technologies
• Relatively larger package size may require more space on the PCB

Working Principles

The IDT71124S12YGI8 is a synchronous SRAM that stores data in a static manner. It utilizes a synchronous interface to communicate with the rest of the system, ensuring synchronized data transfer. The memory cells within the IC retain data without the need for periodic refresh cycles, providing reliable storage.

Detailed Application Field Plans

The IDT71124S12YGI8 can be used in various applications, including:

1. Computer systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking equipment: Provides high-speed memory storage for routers, switches, and network appliances.
3. Telecommunications devices: Used in base stations, modems, and communication infrastructure for data buffering.
4. Consumer electronics: Integrated into gaming consoles, set-top boxes, and multimedia devices for fast data access.
5. Industrial automation: Utilized in control systems, robotics, and factory automation for real-time data processing.

Detailed and Complete Alternative Models

1. IDT71256S15YGI: 256K x 8 synchronous SRAM with a 15 ns access time.
2. **IDT71342