IDT71124S20YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 20 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5mA
• Package Dimensions: 10mm x 10mm

Detailed Pin Configuration

The IDT71124S20YI8 has a total of 44 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. WE#
20. CE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. GND
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• Synchronous operation with clock enable (CE#), write enable (WE#), and output enable (OE#) signals.
• High-speed access time of 20 nanoseconds, allowing for quick data retrieval.
• Low standby current consumption, ensuring energy efficiency.
• Reliable data retention for more than 10 years.
• Easy integration into various electronic systems due to its compact package.

Advantages and Disadvantages

Advantages

• Fast access time enables efficient data processing.
• Low-power consumption contributes to energy savings.
• Compact package size allows for space-efficient designs.
• Reliable data retention ensures data integrity over extended periods.

Disadvantages

• Limited memory size (1 Megabit) compared to higher-capacity alternatives.
• Not suitable for applications requiring larger memory capacities.

Working Principles

The IDT71124S20YI8 is a synchronous SRAM that operates based on the synchronous circuitry principles. It utilizes clock signals to synchronize read and write operations. When the chip select (CE#) signal is active low, the device is enabled, and data can be read from or written to the memory array. The write enable (WE#) signal controls write operations, while the output enable (OE#) signal enables the output buffers.

Detailed Application Field Plans

The IDT71124S20YI8 is commonly used in various applications that require high-speed and reliable data storage. Some of the typical application fields include:

1. Computer systems: Used as cache memory or main memory in computers and servers.
2. Networking equipment: Employed in routers, switches, and network interface cards for fast data processing.
3. Telecommunications: Utilized in base stations, switches, and communication devices for efficient data handling.
4. Industrial automation: Integrated into control systems and programmable logic controllers (PLCs) for data storage and retrieval.
5. Automotive electronics: Used in automotive control units and infotainment systems for quick data access.

Detailed and Complete Alternative Models

1. IDT71256S20YI8: 256K x 8 synchronous SRAM with a 20ns access time.
2. IDT7140SA25J: 4K x 16 asynchronous SRAM with a 25ns access time.
3. IDT7130LA35J: 32K x 8 low-power asynchronous SRAM with a 35ns access time.
4. IDT71502SA55J: 512K x 8 synchronous dual-port SRAM with a 55ns access time.
5. IDT7164SA35P: 8K x 8 synchronous SRAM with a 35ns access time.

These alternative models offer different memory sizes, access times, and functionalities to cater to