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IDT7164S35YG

IDT7164S35YG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory chip
  • Characteristics:
    • High-speed static random-access memory (SRAM)
    • Low power consumption
    • Non-volatile storage
  • Package: 28-pin DIP (Dual In-line Package)
  • Essence: Data storage and retrieval
  • Packaging/Quantity: Available in tubes or trays, quantity varies based on supplier

Specifications

  • Organization: 8K x 8 bits
  • Access Time: 35 ns
  • Operating Voltage: 5V
  • Standby Current: 100 µA (maximum)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: 10 years

Detailed Pin Configuration

The IDT7164S35YG has a total of 28 pins. The pin configuration is as follows:

  1. Chip Enable (CE)
  2. Output Enable (OE)
  3. Write Enable (WE)
  4. Address Inputs (A0-A12)
  5. Data Inputs/Outputs (DQ0-DQ7)
  6. Power Supply (+5V)
  7. Ground (GND)

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low power consumption makes it suitable for battery-powered devices.
  • Non-volatile storage ensures data retention even when power is lost.
  • Easy integration with other components due to standard pin configuration.

Advantages

  • Fast access time enables efficient data processing.
  • Low power consumption prolongs battery life in portable devices.
  • Non-volatile storage ensures data integrity during power interruptions.
  • Standard pin configuration facilitates easy integration into various systems.

Disadvantages

  • Limited storage capacity compared to modern memory chips.
  • Relatively higher cost per bit compared to larger memory modules.
  • Requires external circuitry for proper interfacing with the system.

Working Principles

The IDT7164S35YG is a static random-access memory (SRAM) chip. It stores data in a volatile manner, meaning that it requires a continuous power supply to retain information. The chip uses a combination of transistors and capacitors to store and retrieve data quickly. When the chip receives a read or write command, the appropriate address is selected, and the data is accessed from or written to the corresponding memory location.

Detailed Application Field Plans

The IDT7164S35YG is commonly used in various electronic devices that require fast and reliable data storage. Some of its application fields include:

  1. Microcontrollers: Used as temporary storage for program instructions and data.
  2. Communication Systems: Provides buffer memory for data transmission and reception.
  3. Industrial Control Systems: Stores critical data for real-time monitoring and control.
  4. Automotive Electronics: Utilized in engine management systems and infotainment units.
  5. Medical Equipment: Used for storing patient data and diagnostic information.

Detailed and Complete Alternative Models

  1. IDT71256SA25Y: 32K x 8-bit SRAM, 25 ns access time, 5V operating voltage.
  2. CY62256LL-70SNXCT: 32K x 8-bit SRAM, 70 ns access time, low-power operation.
  3. AS6C4008-55SIN: 512K x 8-bit SRAM, 55 ns access time, small form factor.

These alternative models offer different storage capacities, access times, and features to suit specific application requirements.

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技術ソリューションにおける IDT7164S35YG の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT7164S35YG in technical solutions:

  1. Question: What is IDT7164S35YG?
    Answer: IDT7164S35YG is a specific model of static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT7164S35YG?
    Answer: The IDT7164S35YG has a capacity of 64 kilobits (8 kilobytes) of memory.

  3. Question: What is the operating voltage range for IDT7164S35YG?
    Answer: The operating voltage range for IDT7164S35YG is typically between 4.5V and 5.5V.

  4. Question: What is the access time of IDT7164S35YG?
    Answer: The access time of IDT7164S35YG is 35 nanoseconds, hence the "35" in its part number.

  5. Question: Can IDT7164S35YG be used in battery-powered devices?
    Answer: Yes, IDT7164S35YG can be used in battery-powered devices as long as the operating voltage requirements are met.

  6. Question: Is IDT7164S35YG compatible with standard microcontrollers?
    Answer: Yes, IDT7164S35YG is compatible with most standard microcontrollers that support SRAM interfaces.

  7. Question: Can IDT7164S35YG be used in industrial applications?
    Answer: Yes, IDT7164S35YG is suitable for use in various industrial applications due to its reliability and performance.

  8. Question: Does IDT7164S35YG require any external components for operation?
    Answer: IDT7164S35YG does not require any external components for basic operation. However, additional support circuitry may be needed depending on the specific application.

  9. Question: What is the package type of IDT7164S35YG?
    Answer: IDT7164S35YG is available in a 28-pin DIP (Dual In-line Package) or a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

  10. Question: Can multiple IDT7164S35YG chips be used together to increase memory capacity?
    Answer: Yes, multiple IDT7164S35YG chips can be used together by connecting their address and data lines to create a larger memory space.

Please note that these answers are general and may vary depending on the specific requirements and application of IDT7164S35YG in a technical solution.