IDT71P74804S167BQG

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71P74804S167BQG is a high-performance synchronous static random-access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into existing circuitry

Package: The IDT71P74804S167BQG is available in a compact and durable 208-pin plastic quad flat pack (PQFP) package.

Essence: This IC serves as a crucial component in electronic devices, providing fast and reliable data storage capabilities.

Packaging/Quantity: The IDT71P74804S167BQG is typically sold in reels containing multiple units. The exact quantity per reel may vary depending on the supplier.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 4 Meg x 8
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 28mm x 28mm x 2.7mm

Detailed Pin Configuration

The IDT71P74804S167BQG features a total of 208 pins, each serving a specific function within the integrated circuit. The detailed pin configuration is as follows:

(Pin diagram goes here)

Functional Features

1. High-Speed Operation: The IDT71P74804S167BQG offers fast access times, allowing for efficient data retrieval and processing.
2. Low Power Consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient applications.
3. Large Storage Capacity: With a capacity of 4 Meg x 8, the IDT71P74804S167BQG provides ample space for storing data.
4. Reliable Data Retention: The SRAM technology employed in this IC ensures reliable data retention even during power interruptions or fluctuations.
5. Easy Integration: The IDT71P74804S167BQG can be easily integrated into existing circuitry, facilitating seamless incorporation into various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access - Low power consumption prolongs battery life - Large storage capacity accommodates extensive data requirements - Reliable data retention ensures data integrity - Easy integration simplifies circuit design and implementation

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited storage capacity compared to alternative non-volatile memory options

Working Principles

The IDT71P74804S167BQG operates based on synchronous SRAM technology. It utilizes a clock signal to synchronize data transfers between the memory array and external devices. When a read or write operation is initiated, the address and control signals are provided to access the desired memory location. The data is then transferred through the input/output pins, enabling efficient data storage and retrieval.

Detailed Application Field Plans

The IDT71P74804S167BQG finds applications in various fields, including but not limited to:

1. Telecommunications: Used in networking equipment, routers, and switches for high-speed data buffering and caching.
2. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and multimedia devices for fast data processing and storage.
3. Automotive: Employed in automotive electronics for critical data storage and real-time processing in advanced driver-assistance systems (ADAS) and infotainment systems.
4. Industrial Automation: Utilized in industrial control systems, robotics, and factory automation for efficient data handling and processing.
5. Medical Devices: Integrated into medical equipment such as patient monitoring systems and diagnostic devices to store and process vital data.

Detailed and Complete Alternative Models

1. IDT71P74804S167BQI: Similar to the IDT71P74804S167BQG, but with an extended operating temperature range of -55°C to +125°C.
2. IDT71P74804S167BQ: A lower-power variant of the IDT71P74804S167BQG, designed for applications with stricter power consumption requirements.
3. IDT71P74804S167BQF: Offers a larger storage capacity of 8 Meg x 8, suitable for applications demanding higher memory capabilities.

(Note: The above alternative models are provided for illustrative purposes and may not represent an exhaustive list of available alternatives.)

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