IDT71P74804S250BQ

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71P74804S250BQ is a high-performance synchronous static random access memory (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable performance - Easy integration into existing circuitry

Package: The IDT71P74804S250BQ is available in a compact and durable package, ensuring protection during transportation and handling. The package type is BGA (Ball Grid Array).

Essence: This IC serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity: The IDT71P74804S250BQ is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Size: 4 Megabits (4Mb)
• Organization: 512K x 8 bits
• Supply Voltage: 2.5V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 100

Detailed Pin Configuration

The IDT71P74804S250BQ features a total of 100 pins, each serving a specific function within the IC. The pin configuration is as follows:

(Pin diagram goes here)

Functional Features

1. High-Speed Operation: The IDT71P74804S250BQ offers fast access times, allowing for quick data retrieval and processing.
2. Low Power Consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient systems.
3. Large Storage Capacity: With a memory size of 4Mb, the IDT71P74804S250BQ provides ample space for storing data.
4. Reliable Performance: The IC is built to deliver consistent and reliable performance, ensuring data integrity and system stability.
5. Easy Integration: The IDT71P74804S250BQ can be easily integrated into existing circuitry, facilitating seamless integration into various electronic devices and systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable performance ensures data integrity and system stability. - Easy integration simplifies the design and implementation process.

Disadvantages: - Limited compatibility with certain older systems or devices that require different voltage levels or pin configurations. - Relatively higher cost compared to lower-capacity SRAM options.

Working Principles

The IDT71P74804S250BQ operates based on the principles of synchronous static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve data in a fast and efficient manner. The synchronous design ensures proper timing and synchronization between the memory and the rest of the system.

Detailed Application Field Plans

The IDT71P74804S250BQ finds application in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V416: 4 Megabit (512K x 8) CMOS SRAM
2. IDT71V424: 4 Megabit (256K x 16) CMOS SRAM
3. IDT71V432: 4 Megabit (128K x 32) CMOS SRAM
4. IDT71V433: 4 Megabit (64K x 64) CMOS SRAM

These alternative models offer similar storage capacities and functionalities, providing flexibility in choosing the most suitable IC for specific applications.

Note: The content provided above is a sample entry and may not reflect actual specifications or details of the IDT71P74804S250BQ or its alternative models.