IDT71T75602S200PFGI

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics:
- High-speed performance
- Large storage capacity
- Low power consumption
Package: Plastic Fine-Pitch Ball Grid Array (PFBGA)
Essence: Non-volatile memory
Packaging/Quantity: Individually packaged, quantity varies based on supplier

Specifications

Memory Type: Static Random Access Memory (SRAM)
Density: 2 Megabits (256K x 8)
Operating Voltage: 3.3V
Access Time: 10 ns
Operating Temperature Range: -40°C to +85°C
Data Retention: 100 years
Interface: Parallel

Detailed Pin Configuration

The IDT71T75602S200PFGI has a total of 100 pins. The pin configuration is as follows:

VCC
A0
A1
A2
A3
A4
A5
A6
A7
GND
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
WE#
OE#
CE#
UB#
LB#
VSSQ
VCCQ
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC

Functional Features

High-speed access and data transfer
Non-volatile memory retains data even when power is disconnected
Low power consumption for energy efficiency
Easy integration into existing circuit designs
Reliable performance with long data retention period

Advantages and Disadvantages

Advantages: - High-speed performance allows for quick data access - Large storage capacity accommodates a significant amount of data - Low power consumption reduces energy usage and extends battery life - Non-volatile memory ensures data retention even during power loss

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited scalability in terms of density compared to newer memory types - Susceptible to electromagnetic interference (EMI) due to parallel interface

Working Principles

The IDT71T75602S200PFGI is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in an array, with each cell storing one bit of data. The address lines select the desired memory location, and the data lines allow reading from or writing to that location. The control signals (WE#, OE#, CE#) manage the read and write operations.

Detailed Application Field Plans

The IDT71T75602S200PFGI is commonly used in various applications, including:

Computer systems
Networking equipment

技術ソリューションにおける IDT71T75602S200PFGI の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71T75602S200PFGI in technical solutions:

Question: What is IDT71T75602S200PFGI?
- Answer: IDT71T75602S200PFGI is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Integrated Device Technology (IDT).
Question: What is the capacity of IDT71T75602S200PFGI?
- Answer: The IDT71T75602S200PFGI has a capacity of 8 Megabits (Mb), which is equivalent to 1 Megabyte (MB).
Question: What is the operating voltage range for IDT71T75602S200PFGI?
- Answer: The operating voltage range for IDT71T75602S200PFGI is typically between 3.0V and 3.6V.
Question: What is the access time of IDT71T75602S200PFGI?
- Answer: The access time of IDT71T75602S200PFGI is 20 nanoseconds (ns).
Question: Can IDT71T75602S200PFGI be used in industrial applications?
- Answer: Yes, IDT71T75602S200PFGI is suitable for industrial applications as it can operate within the specified temperature range of -40°C to +85°C.
Question: Does IDT71T75602S200PFGI support multiple read and write operations simultaneously?
- Answer: No, IDT71T75602S200PFGI does not support multiple read and write operations simultaneously. It operates in a single read or write mode at a time.
Question: What is the pin configuration of IDT71T75602S200PFGI?
- Answer: IDT71T75602S200PFGI has a 44-pin TSOP (Thin Small Outline Package) configuration.
Question: Can IDT71T75602S200PFGI be used in battery-powered devices?
- Answer: Yes, IDT71T75602S200PFGI can be used in battery-powered devices as it operates within a low voltage range and has low power consumption.
Question: Does IDT71T75602S200PFGI have any built-in error correction mechanisms?
- Answer: No, IDT71T75602S200PFGI does not have any built-in error correction mechanisms. It is a standard synchronous SRAM.
Question: Is IDT71T75602S200PFGI compatible with other memory interfaces?
- Answer: Yes, IDT71T75602S200PFGI is compatible with various industry-standard memory interfaces such as asynchronous SRAM, NOR Flash, and FPGAs.

Please note that the answers provided here are general and may vary depending on the specific technical requirements and use cases.