IDT71T75902S80BGG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: BGA (Ball Grid Array)
• Essence: The IDT71T75902S80BGG8 is a high-performance SRAM designed for use in various electronic systems.
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel.

Specifications

• Memory Size: 2 Megabits (256K x 8 bits)
• Operating Voltage: 3.3V
• Access Time: 8 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71T75902S80BGG8 has a total of 119 pins. Here is a brief overview of the pin configuration:

• Pins 1-8: Data Input/Output (DQ0-DQ7)
• Pins 9-12: Address Inputs (A0-A3)
• Pins 13-16: Chip Enable (CE, CE2, CE3, CE4)
• Pins 17-20: Output Enable (OE, OE2, OE3, OE4)
• Pins 21-24: Write Enable (WE, WE2, WE3, WE4)
• Pins 25-28: Clock Inputs (CLK, CLK2, CLK3, CLK4)
• Pins 29-32: Power Supply (VCC, VCCQ, VSS, VSSQ)

(Note: This is just a partial representation of the pin configuration. Please refer to the datasheet for a complete pinout diagram.)

Functional Features

• High-speed operation: The IDT71T75902S80BGG8 offers fast access times, making it suitable for applications that require quick data retrieval.
• Low-power consumption: Designed with power efficiency in mind, this SRAM minimizes energy consumption, making it ideal for battery-powered devices.
• Synchronous interface: The synchronous design ensures reliable and synchronized data transfers between the memory device and the host system.

Advantages and Disadvantages

Advantages: - High-speed operation allows for efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfers.

Disadvantages: - Limited memory size (2 Megabits) compared to larger capacity memory devices. - BGA package may require specialized equipment for soldering and rework.

Working Principles

The IDT71T75902S80BGG8 operates as a synchronous SRAM. It stores and retrieves data using an address bus, data bus, and control signals. When a read operation is initiated, the specified address is sent to the memory device, and the corresponding data is retrieved from the internal memory array. Similarly, during a write operation, data is written to the specified address location.

Detailed Application Field Plans

The IDT71T75902S80BGG8 can be used in various electronic systems, including but not limited to:

1. Networking equipment: Routers, switches, and network interface cards often require high-speed memory for efficient data processing.
2. Telecommunications devices: Communication systems, such as base stations and voice/data routers, can benefit from the fast access times of this SRAM.
3. Industrial automation: Control systems, robotics, and process automation equipment often rely on high-performance memory devices for real-time data processing.

Alternative Models

Here are some alternative models that offer similar functionality:

1. Micron MT45W2MW16BFB-708 WT: 2 Megabit Synchronous SRAM, BGA package.
2. Cypress CY7C1049G30-10BVXI: 2 Megabit Synchronous SRAM, BGA package.
3. Samsung K6R4016V1D-UI10: 2 Megabit Synchronous SRAM, BGA package.

(Note: The above models are provided as examples and may not be an exhaustive list of alternatives.)

In conclusion, the IDT71T75902S80BGG8 is a high-speed, low-power synchronous SRAM designed for various electronic systems. With its reliable performance and efficient data processing capabilities, it serves as a valuable memory solution in applications that require fast and power-efficient data storage and retrieval.