IDT71V016SA12Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 44-pin Plastic Thin Small Outline Package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 10 μA
• Package Dimensions: 0.400" x 0.875"

Pin Configuration

The IDT71V016SA12Y has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. OE#
28. CE#
29. WE#
30. BYTE#
31. BYTE
32. DQ8
33. DQ9
34. DQ10
35. DQ11
36. DQ12
37. DQ13
38. DQ14
39. DQ15
40. VCC
41. VCCQ
42. NC
43. NC
44. GND

Functional Features

• High-speed synchronous operation
• Low-power consumption
• Easy interfacing with other devices
• Byte-write and page-write capability
• Automatic power-down mode when deselected
• Output enable and write enable control signals for easy data access

Advantages

• Fast access time allows for quick data retrieval
• Low standby current helps conserve power
• Reliable data retention ensures long-term storage of information
• Small package size saves board space in electronic designs
• Easy integration with other components due to standard pin configuration

Disadvantages

• Limited memory size (1 Megabit)
• Requires external voltage regulation for proper operation
• Not suitable for applications requiring larger memory capacities

Working Principles

The IDT71V016SA12Y is a synchronous SRAM that operates using an external clock signal. It stores and retrieves data by utilizing a matrix of memory cells organized in a grid pattern. The memory cells are accessed through address lines, and the data is read or written through data input/output lines. The device supports byte-write and page-write operations, allowing for efficient data manipulation.

Detailed Application Field Plans

The IDT71V016SA12Y is commonly used in various applications, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Consumer electronics
6. Automotive electronics

Alternative Models

Here are some alternative models that offer similar functionality:

1. IDT71V016S25Y: 1 Megabit synchronous SRAM with a 25 ns access time
2. IDT71V016SA15Y: 1 Megabit synchronous SRAM with a 15 ns access time
3. IDT71V016S35Y: 1 Megabit synchronous SRAM with a 35 ns access time
4. IDT71V016SA10Y: 1 Megabit synchronous SRAM with a 10 ns access time

These alternative models provide options for different speed requirements in various applications.

In conclusion, the IDT71V016SA12Y is a high-speed, low-power synchronous SRAM that offers reliable data storage and retrieval capabilities. Its small package size and easy integration make it suitable for a wide range of applications. However, its limited memory size and external voltage regulation requirement should be considered when selecting this device for specific projects.