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IDT71V016SA20Y

IDT71V016SA20Y

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Low power consumption
    • Large storage capacity
  • Package: Surface Mount Technology (SMT)
  • Essence: Non-volatile memory
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Density: 1 Megabit (128K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 20 nanoseconds
  • Operating Temperature: -40°C to +85°C
  • Data Retention: 10 years

Pin Configuration

The IDT71V016SA20Y has a total of 32 pins. The pin configuration is as follows:

  1. A12
  2. A7
  3. A6
  4. A5
  5. A4
  6. A3
  7. A2
  8. A1
  9. A0
  10. VCC
  11. I/O0
  12. I/O1
  13. I/O2
  14. I/O3
  15. I/O4
  16. I/O5
  17. I/O6
  18. I/O7
  19. GND
  20. CE1
  21. CE2
  22. WE
  23. OE
  24. LB
  25. UB
  26. A8
  27. A9
  28. A11
  29. A10
  30. NC
  31. NC
  32. NC

Functional Features

  • High-speed access and data transfer
  • Low power consumption during standby mode
  • Easy integration into various electronic systems
  • Reliable data retention and non-volatile storage
  • Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages: - Fast access time for efficient data retrieval - Low power consumption for energy efficiency - Large storage capacity for versatile applications - Reliable data retention for long-term usage - Easy integration into existing systems

Disadvantages: - Limited compatibility with certain older systems - Higher cost compared to other memory technologies - Sensitivity to electrostatic discharge (ESD) during handling

Working Principles

The IDT71V016SA20Y is a static random access memory (SRAM) device that stores data using flip-flop circuits. It operates by storing each bit of data in a dedicated flip-flop, which retains the information as long as power is supplied. The memory cells are organized in a matrix, allowing for fast and random access to any location within the memory array.

When a read operation is initiated, the desired memory address is provided to the address pins, and the corresponding data is accessed and outputted on the I/O pins. Similarly, during a write operation, the address and data to be written are provided, and the memory cell at the specified address is updated with the new data.

Detailed Application Field Plans

The IDT71V016SA20Y is widely used in various electronic devices and systems that require high-speed and reliable data storage. Some common application fields include:

  1. Computer Systems:

    • Cache memory
    • Buffer memory
    • System memory
  2. Communication Equipment:

    • Network routers
    • Switches
    • Modems
  3. Consumer Electronics:

    • Set-top boxes
    • Digital cameras
    • Printers
  4. Automotive Electronics:

    • Engine control units
    • Infotainment systems
    • Advanced driver-assistance systems (ADAS)

Detailed and Complete Alternative Models

  1. IDT71V016SA25Y: Similar to IDT71V016SA20Y, but with a faster access time of 25 nanoseconds.
  2. IDT71V016SA30Y: Similar to IDT71V016SA20Y, but with a slower access time of 30 nanoseconds.
  3. IDT71V016SA15PHI: Similar to IDT71V016SA20Y, but in a different package (Plastic Leaded Chip Carrier).

These alternative models offer similar functionality and characteristics, but with slight variations in specifications or packaging options.

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技術ソリューションにおける IDT71V016SA20Y の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V016SA20Y in technical solutions:

  1. Question: What is IDT71V016SA20Y?
    Answer: IDT71V016SA20Y is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 16 megabits (2 megabytes). It is commonly used in various technical solutions that require fast and reliable memory.

  2. Question: What is the operating voltage range for IDT71V016SA20Y?
    Answer: The operating voltage range for IDT71V016SA20Y is typically between 3.0V and 3.6V.

  3. Question: What is the access time of IDT71V016SA20Y?
    Answer: The access time of IDT71V016SA20Y is 20 nanoseconds (ns), hence the "20Y" in its part number.

  4. Question: Can IDT71V016SA20Y be used in battery-powered devices?
    Answer: Yes, IDT71V016SA20Y is designed to operate at low power and can be used in battery-powered devices.

  5. Question: What is the pin configuration of IDT71V016SA20Y?
    Answer: IDT71V016SA20Y has a 44-pin TSOP (Thin Small Outline Package) configuration.

  6. Question: Does IDT71V016SA20Y support asynchronous or synchronous operation?
    Answer: IDT71V016SA20Y supports asynchronous operation, which means it does not require a clock signal for data transfer.

  7. Question: What is the standby current consumption of IDT71V016SA20Y?
    Answer: The standby current consumption of IDT71V016SA20Y is typically very low, making it suitable for power-sensitive applications.

  8. Question: Can IDT71V016SA20Y be used in industrial temperature environments?
    Answer: Yes, IDT71V016SA20Y is designed to operate in a wide temperature range, including industrial temperature environments.

  9. Question: Does IDT71V016SA20Y have any built-in error correction capabilities?
    Answer: No, IDT71V016SA20Y does not have built-in error correction capabilities. Additional error correction techniques may need to be implemented if required.

  10. Question: What are some typical applications of IDT71V016SA20Y?
    Answer: IDT71V016SA20Y is commonly used in various technical solutions such as networking equipment, telecommunications systems, industrial automation, and embedded systems where fast and reliable memory is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.