IDT71V016SA20Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Surface Mount Technology (SMT)
• Essence: Static Random Access Memory (SRAM)
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Organization: 128K words x 8 bits
• Supply Voltage: 3.3V
• Access Time: 20 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2.0V minimum
• Standby Current: 10µA maximum
• Active Current: 50mA maximum

Detailed Pin Configuration

The IDT71V016SA20Y8 has a total of 32 pins, which are assigned as follows:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB, LB: Upper Byte, Lower Byte Enables
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation allows for fast data access.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity provides ample memory for various applications.
• SMT package enables easy integration onto circuit boards.

Advantages

• Fast access time enhances overall system performance.
• Low power consumption prolongs battery life.
• Ample storage capacity accommodates complex data requirements.
• SMT package simplifies PCB assembly and reduces space requirements.

Disadvantages

• Limited memory size compared to newer technologies.
• Relatively higher cost per bit compared to other memory types.
• Vulnerable to data loss in case of power failure.

Working Principles

The IDT71V016SA20Y8 is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized into a matrix, with each cell storing one bit of data. The address inputs select the desired memory location, and the data inputs/outputs facilitate reading from or writing to the selected location.

Detailed Application Field Plans

The IDT71V016SA20Y8 is commonly used in various electronic devices that require high-speed and low-power memory, such as:

1. Personal Computers (PCs)
2. Servers
3. Networking Equipment
4. Telecommunications Systems
5. Industrial Control Systems
6. Automotive Electronics
7. Consumer Electronics

Detailed Alternative Models

1. Samsung K6R1008C1D-JI10
2. Micron MT45W8MW16BGX-701 WT
3. Cypress CY62157EV30LL-45ZSXI
4. Renesas R1LV0416DSB-7SI#B0
5. NXP PBRN040PAEN

These alternative models offer similar specifications and functionality to the IDT71V016SA20Y8 and can be considered as alternatives based on specific requirements.

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