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IDT71V2556S133BG

IDT71V2556S133BG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed synchronous static random-access memory (SRAM)
    • 256 Megabit (32M x 8-bit) capacity
    • Operating frequency of 133 MHz
    • Burst mode operation
    • Low power consumption
  • Package: Ball Grid Array (BGA)
  • Essence: The IDT71V2556S133BG is a high-performance SRAM designed for use in various electronic devices that require fast and reliable data storage.
  • Packaging/Quantity: Available in tape and reel packaging, with a quantity of [insert quantity].

Specifications

  • Memory Capacity: 256 Megabits (32M x 8-bit)
  • Operating Frequency: 133 MHz
  • Access Time: [insert access time]
  • Operating Voltage: [insert operating voltage range]
  • Standby Current: [insert standby current]
  • Operating Temperature Range: [insert temperature range]

Pin Configuration

The IDT71V2556S133BG has a total of [insert number] pins. The pin configuration is as follows:

  1. [Pin 1]: [Description]
  2. [Pin 2]: [Description]
  3. [Pin 3]: [Description] ... ...

Functional Features

  • High-speed operation: The IDT71V2556S133BG operates at a frequency of 133 MHz, allowing for fast data access and transfer.
  • Burst mode operation: This memory device supports burst mode, enabling efficient sequential data retrieval.
  • Low power consumption: The IDT71V2556S133BG is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Reliable data storage: With its synchronous SRAM technology, this device ensures reliable and stable data storage.

Advantages

  • High-speed operation allows for quick data access.
  • Burst mode operation enhances data retrieval efficiency.
  • Low power consumption prolongs battery life in portable devices.
  • Reliable data storage ensures data integrity.

Disadvantages

  • Limited memory capacity compared to other higher-capacity memory devices.
  • Higher cost compared to lower-performance memory options.

Working Principles

The IDT71V2556S133BG operates based on synchronous SRAM technology. It uses a clock signal to synchronize data transfer between the memory cells and the external system. When a read or write operation is initiated, the address of the desired memory location is provided, and the corresponding data is accessed or stored.

Application Field Plans

The IDT71V2556S133BG can be used in various electronic devices that require high-speed and reliable data storage, such as:

  1. Networking equipment
  2. Telecommunications systems
  3. Industrial automation devices
  4. Medical equipment
  5. Automotive electronics
  6. Consumer electronics

Alternative Models

  1. [Alternative Model 1]: [Description]
  2. [Alternative Model 2]: [Description]
  3. [Alternative Model 3]: [Description] ... ...

Please note that the above information is subject to change, and it is recommended to refer to the product datasheet for the most up-to-date specifications and details.

技術ソリューションにおける IDT71V2556S133BG の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V2556S133BG in technical solutions:

  1. Q: What is IDT71V2556S133BG? A: IDT71V2556S133BG is a high-speed, low-power CMOS static RAM (SRAM) device manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V2556S133BG? A: IDT71V2556S133BG has a capacity of 256K x 36 bits, which means it can store 256 kilobits of data organized into 36-bit words.

  3. Q: What is the operating voltage range for IDT71V2556S133BG? A: The operating voltage range for IDT71V2556S133BG is typically between 3.0V and 3.6V.

  4. Q: What is the maximum clock frequency supported by IDT71V2556S133BG? A: IDT71V2556S133BG supports a maximum clock frequency of 133 MHz, making it suitable for high-speed applications.

  5. Q: Can IDT71V2556S133BG be used in battery-powered devices? A: Yes, IDT71V2556S133BG is designed to operate at low power, making it suitable for battery-powered devices.

  6. Q: Does IDT71V2556S133BG support multiple chip enable signals? A: Yes, IDT71V2556S133BG supports two chip enable signals (CE1 and CE2), allowing for flexible memory access control.

  7. Q: What is the access time of IDT71V2556S133BG? A: The access time of IDT71V2556S133BG is typically 10 ns, which means it can provide data within 10 nanoseconds after receiving a read command.

  8. Q: Can IDT71V2556S133BG operate in industrial temperature ranges? A: Yes, IDT71V2556S133BG is designed to operate in industrial temperature ranges (-40°C to +85°C), making it suitable for harsh environments.

  9. Q: Does IDT71V2556S133BG support burst mode operation? A: Yes, IDT71V2556S133BG supports burst mode operation, allowing for efficient data transfer between the memory and the processor.

  10. Q: Is IDT71V2556S133BG pin-compatible with other SRAM devices? A: No, IDT71V2556S133BG has its own specific pin configuration and is not pin-compatible with other SRAM devices.

Please note that these answers are general and may vary depending on the specific application and requirements. It's always recommended to refer to the datasheet or consult with the manufacturer for detailed information.