IDT71V2556S166BG8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous SRAM
Package: BGA (Ball Grid Array)
Essence: The IDT71V2556S166BG8 is a high-performance memory chip designed for various applications that require fast and reliable data storage.
Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel.

Specifications

Memory Type: Synchronous SRAM
Density: 4 Megabits (256K x 16)
Operating Voltage: 3.3V
Access Time: 10 ns
Operating Temperature Range: -40°C to +85°C
Data Retention: 10 years
Interface: Parallel
Pin Count: 119

Detailed Pin Configuration

The IDT71V2556S166BG8 has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
/CE2
/CE1
/OE
/WE
/UBS
/LDS
/UDS
/RAS
/CAS
/CS
CLK
VDD
VSS
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
VDDQ
VSSQ
VDD
VSS

Functional Features

High-speed operation with a 10 ns access time.
Low-power consumption, making it suitable for battery-powered devices.
Synchronous interface allows for efficient data transfer.
Reliable data storage with a 10-year data retention period.
Easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed performance enables fast data access. - Low-power consumption extends battery life in portable devices. - Synchronous interface ensures efficient data transfer. - Reliable data storage with long data retention period.

Disadvantages: - Limited memory capacity compared to newer memory technologies. - Higher cost

技術ソリューションにおける IDT71V2556S166BG8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V2556S166BG8 in technical solutions:

Q: What is IDT71V2556S166BG8? A: IDT71V2556S166BG8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V2556S166BG8? A: The IDT71V2556S166BG8 has a capacity of 4 Megabytes (MB), which is equivalent to 32 Megabits (Mb).
Q: What is the operating voltage range for IDT71V2556S166BG8? A: The operating voltage range for IDT71V2556S166BG8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V2556S166BG8? A: The access time of IDT71V2556S166BG8 is 10 ns, meaning it takes approximately 10 nanoseconds to read or write data.
Q: Can IDT71V2556S166BG8 be used in battery-powered devices? A: Yes, IDT71V2556S166BG8 can be used in battery-powered devices as long as the operating voltage requirements are met.
Q: Is IDT71V2556S166BG8 compatible with standard microcontrollers? A: Yes, IDT71V2556S166BG8 is compatible with most standard microcontrollers that support SRAM interfacing.
Q: Does IDT71V2556S166BG8 support burst mode operation? A: Yes, IDT71V2556S166BG8 supports burst mode operation, allowing for faster consecutive read or write operations.
Q: Can IDT71V2556S166BG8 be used in high-speed data processing applications? A: Yes, IDT71V2556S166BG8 is suitable for high-speed data processing applications due to its fast access time.
Q: What is the package type of IDT71V2556S166BG8? A: IDT71V2556S166BG8 comes in a 119-ball BGA (Ball Grid Array) package.
Q: Are there any specific temperature requirements for IDT71V2556S166BG8? A: IDT71V2556S166BG8 has an operating temperature range of -40°C to +85°C, making it suitable for various environments.

Please note that these answers are general and may vary depending on the specific application and requirements.