IDT71V2558S133PF

Product Overview

Category

The IDT71V2558S133PF belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Reliable data retention
• Easy integration into circuit designs

Package

The IDT71V2558S133PF is available in a small form factor package, which allows for space-efficient integration into electronic devices.

Essence

The essence of this product lies in its ability to provide fast and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IDT71V2558S133PF is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 32M x 8 bits
• Operating Voltage: 3.3V
• Access Time: 133 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 44 pins
• Data Retention: Greater than 10 years

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. WE#
20. CE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. GND
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into circuit designs
• Reliable data retention even in harsh environmental conditions
• Compatibility with various electronic devices and systems

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption helps conserve energy
• Large storage capacity accommodates a wide range of applications
• Reliable data retention ensures data integrity
• Easy integration simplifies circuit design and manufacturing processes

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Sensitivity to electrical noise and interference

Working Principles

The IDT71V2558S133PF operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a matrix structure, allowing for efficient addressing and retrieval of data.

When a read operation is initiated, the address lines specify the location of the desired data, and the output data lines provide the requested information. During a write operation, the data to be stored is applied to the input/output lines, along with the corresponding address. The write enable signal controls the writing process.

Detailed Application Field Plans

The IDT71V2558S133PF finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. IDT71V2558S100PF
2. IDT71V2558S85PF
3. IDT71V2558S70PF
4. IDT71V2558S55PF
5. IDT71V2558S40PF

These alternative models offer similar functionality and characteristics to the IDT71V2558S133PF, but with different access times and operating voltages.

In conclusion, the IDT71V2558S133PF is a high-performance SRAM integrated circuit that provides fast and reliable memory storage capabilities for a wide range of electronic devices. Its characteristics, pin configuration, functional features, advantages, and disadvantages make it suitable for various applications in different industries. Additionally, there are alternative models available with varying specifications to cater to specific requirements.