IDT71V2558S133PF8

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V2558S133PF8 is a high-speed, low-power CMOS static random access memory (SRAM) device. It is designed for use in various electronic systems that require fast and reliable data storage.

Characteristics: - High speed: The IDT71V2558S133PF8 operates at a clock frequency of 133 MHz, allowing for rapid data access and transfer. - Low power consumption: This SRAM device is optimized for low power operation, making it suitable for battery-powered devices or energy-efficient applications. - Large capacity: With a storage capacity of 2,048 kilobits (256 kilobytes), the IDT71V2558S133PF8 can accommodate a significant amount of data. - Easy integration: The device features a standard parallel interface, enabling seamless integration into existing system designs.

Package: The IDT71V2558S133PF8 is available in an industry-standard 100-pin plastic quad flat pack (PQFP) package. This package offers mechanical protection and facilitates easy soldering onto printed circuit boards.

Essence: The essence of the IDT71V2558S133PF8 lies in its ability to provide high-speed, low-power data storage in a compact form factor.

Packaging/Quantity: Each IDT71V2558S133PF8 package contains one IC.

Specifications

• Organization: 256K x 8 bits
• Operating Voltage: 3.3V
• Access Time: 7.5 ns
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years

Pin Configuration

The IDT71V2558S133PF8 features a 100-pin PQFP package with the following pin configuration:

Pin 1: VCC Pin 2: A12 Pin 3: A7 ... Pin 99: GND Pin 100: NC

For a detailed pinout diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed access: The IDT71V2558S133PF8 offers fast access times, allowing for efficient data retrieval and manipulation.
• Low-power operation: With its optimized power consumption, this SRAM device helps conserve energy in battery-powered applications.
• Easy integration: The standard parallel interface simplifies the integration of the IDT71V2558S133PF8 into various electronic systems.
• Reliable data storage: The CMOS technology used in this device ensures reliable data retention and integrity.

Advantages and Disadvantages

Advantages: - High-speed operation enables rapid data access. - Low-power consumption prolongs battery life in portable devices. - Large storage capacity accommodates substantial amounts of data. - Easy integration into existing system designs.

Disadvantages: - Limited operating temperature range (-40°C to +85°C). - Relatively high standby current compared to some low-power SRAM alternatives.

Working Principles

The IDT71V2558S133PF8 operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The device utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V2558S133PF8 can be utilized in various applications, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to the IDT71V2558S133PF8 that offer similar functionality include: - Cypress CY7C1041CV33 - Micron MT45W2MW16BFB-708 WT - Samsung K6R4016V1D-TC10

These alternative models can be considered based on specific requirements, such as operating voltage, access time, or package type.

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