IDT, Integrated Device Technology Inc
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IDT71V2559S85BG
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IDT71V2559S85BG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
  • Package: Ball Grid Array (BGA)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in reels or trays, quantity depends on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 4 Megabits (256K x 16)
  • Operating Voltage: 3.3V
  • Access Time: 8.5 ns
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Pin Count: 119

Detailed Pin Configuration

The IDT71V2559S85BG has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. VSSQ
  3. NC
  4. A0
  5. A1
  6. A2
  7. A3
  8. A4
  9. A5
  10. A6
  11. A7
  12. A8
  13. A9
  14. A10
  15. A11
  16. A12
  17. A13
  18. A14
  19. A15
  20. A16
  21. A17
  22. A18
  23. A19
  24. A20
  25. A21
  26. A22
  27. A23
  28. A24
  29. A25
  30. A26
  31. A27
  32. A28
  33. A29
  34. A30
  35. A31
  36. BYTE#
  37. BYTE#
  38. BYTE#
  39. BYTE#
  40. BYTE#
  41. BYTE#
  42. BYTE#
  43. BYTE#
  44. BYTE#
  45. BYTE#
  46. BYTE#
  47. BYTE#
  48. BYTE#
  49. BYTE#
  50. BYTE#
  51. BYTE#
  52. BYTE#
  53. BYTE#
  54. BYTE#
  55. BYTE#
  56. BYTE#
  57. BYTE#
  58. BYTE#
  59. BYTE#
  60. BYTE#
  61. BYTE#
  62. BYTE#
  63. BYTE#
  64. BYTE#
  65. BYTE#
  66. BYTE#
  67. BYTE#
  68. BYTE#
  69. BYTE#
  70. BYTE#
  71. BYTE#
  72. BYTE#
  73. BYTE#
  74. BYTE#
  75. BYTE#
  76. BYTE#
  77. BYTE#
  78. BYTE#
  79. BYTE#
  80. BYTE#
  81. BYTE#
  82. BYTE#
  83. BYTE#
  84. BYTE#
  85. BYTE#
  86. BYTE#
  87. BYTE#
  88. BYTE#
  89. BYTE#
  90. BYTE#
  91. BYTE#
  92. BYTE#
  93. BYTE#
  94. BYTE#
  95. BYTE#
  96. BYTE#
  97. BYTE#
  98. BYTE#
  99. BYTE#
  100. BYTE#
  101. BYTE#
  102. BYTE#
  103. BYTE#
  104. BYTE#
  105. BYTE#
  106. BYTE#
  107. BYTE#
  108. BYTE#
  109. BYTE#
  110. BYTE#
  111. BYTE#
  112. BYTE#
  113. BYTE#
  114. BYTE#
  115. BYTE#
  116. BYTE#
  117. BYTE#
  118. BYTE#
  119. VDD

Functional Features

  • High-speed operation: The IDT71V2559S85BG offers fast access times, making it suitable for applications that require quick data retrieval.
  • Low-power consumption: This SRAM device is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
  • Synchronous operation: The device operates synchronously with the system clock, ensuring reliable and synchronized data transfers.
  • Easy integration: The parallel interface simplifies the integration of the IDT71V2559S85BG into existing systems.

Advantages and Disadvantages

Advantages

  • High-speed operation enables fast data access
  • Low-power consumption prolongs battery life
  • Synchronous operation ensures reliable data transfers
  • Easy integration into existing systems

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Higher cost per bit compared to larger capacity memory devices

Working Principles

The IDT71V2559S85BG is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs from the system and providing corresponding data outputs. The device synchronizes its operations with the system clock, allowing for efficient and reliable data transfers.

Detailed Application Field Plans

The IDT71V2559S85BG can be used in various applications, including:

  1. Networking equipment: Provides high-speed data buffering capabilities for routers

技術ソリューションにおける IDT71V2559S85BG の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V2559S85BG in technical solutions:

  1. Q: What is IDT71V2559S85BG? A: IDT71V2559S85BG is a high-speed, low-power CMOS static RAM (SRAM) device manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V2559S85BG? A: IDT71V2559S85BG has a capacity of 32 megabits (4 megabytes) organized as 2,097,152 words by 16 bits.

  3. Q: What is the operating voltage range for IDT71V2559S85BG? A: The operating voltage range for IDT71V2559S85BG is 3.0V to 3.6V.

  4. Q: What is the access time of IDT71V2559S85BG? A: IDT71V2559S85BG has an access time of 8.5 nanoseconds (ns).

  5. Q: Can IDT71V2559S85BG be used in battery-powered devices? A: Yes, IDT71V2559S85BG is suitable for battery-powered devices due to its low power consumption.

  6. Q: Does IDT71V2559S85BG support multiple read and write operations simultaneously? A: Yes, IDT71V2559S85BG supports simultaneous read and write operations on different memory locations.

  7. Q: Is IDT71V2559S85BG compatible with standard SRAM interfaces? A: Yes, IDT71V2559S85BG is compatible with industry-standard asynchronous SRAM interfaces.

  8. Q: Can IDT71V2559S85BG operate in harsh environments? A: No, IDT71V2559S85BG is not designed for operation in extreme temperature or high radiation environments.

  9. Q: What are the typical applications of IDT71V2559S85BG? A: IDT71V2559S85BG is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems.

  10. Q: Does IDT provide technical support for IDT71V2559S85BG? A: Yes, IDT offers technical support for their products, including IDT71V2559S85BG. Customers can contact IDT's support team for assistance.

Please note that these answers are general and may vary depending on specific requirements and use cases.